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LX5518
LX5518
LX5518
InGaP HBT 2.4 2.5 GHz Power Amplifier
TM
PRODUCTION DATA SHEET
DESCRIPTION KEY FEATURES
Advanced InGaP HBT
The LX5518 is a high gain and high LX5518 also features an on-chip
2.4-2.5GHz Operation
power amplifier optimized for power detector at the output port of
Single-Polarity 3-5V Supply
802.11b/g/n applications in the 2.4-2.5 the PA to help reduce BOM cost and
Power Gain ~ 30 dB
GHz frequency range. The PA is PCB space for implementation of
26dBm @3%EVM,802.11g/5V
implemented as a three-stage monolithic power control in a typical wireless
24dBm @3.5%EVM,80211g/3.3V
microwave integrated circuit (MMIC) system.
28dBm @CCK,802.11b/5V
with active bias, on-chip input The LX5518 is available in a 16-
27dBm @CCK,802.11b/3.3V
matching, and output pre-matching. pin 3mm x 3mm quad flat no lead
24.5% Efficiency @28dBm/5V
The device is manufactured with an
package (QFN 33-16L). The Complete On-Chip Input Match
Simple Output Match for Optimal
InGaP/GaAs Heterojunction Bipolar
compact footprint, low profile, and
EVM
Transistor (HBT) IC process
excellent thermal capability make the
Temperature-Compensated On-
(MOCVD). It operates with a single
LX5518 an ideal solution for
Chip Output Power Detector with
positive voltage supply of 3-5V, and
802.11b/g/n applications.
Wide Dynamic Range
provides a power gain of 30dB and an 2
Small Footprint: 3x3mm
output power of +26dBm at 5V for 3%
Low Profile: 0.9mm
EVM in the 2.4-2.5GHz.
IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM
TM
INFORMATION
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The full data sheet for this device contains proprietary information.
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