X-On Electronics has gained recognition as a prominent supplier of MIC94050YM4-TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. MIC94050YM4-TR MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MIC94050YM4-TR Microchip

MIC94050YM4-TR electronic component of Microchip
MIC94050YM4-TR Microchip
MIC94050YM4-TR MOSFETs
MIC94050YM4-TR  Semiconductors

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See Product Specifications
Part No. MIC94050YM4-TR
Manufacturer: Microchip
Category: MOSFETs
Description: Trans MOSFET P-CH Si 6V 1.8A 4-Pin(3+Tab) SOT-143 T/R
Datasheet: MIC94050YM4-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
255: USD 0.2638 ea
Line Total: USD 67.27 
Availability - 533
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ: 255  Multiples: 1
Pack Size: 1
Availability Price Quantity
2895
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 2985
Multiples : 3000
2985 : USD 0.638
3000 : USD 0.58
6000 : USD 0.5772
12000 : USD 0.5742
24000 : USD 0.5714

2422
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 0.6902
25 : USD 0.5905
100 : USD 0.4879
3000 : USD 0.4879

2895
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 2985
Multiples : 2985
2985 : USD 0.754
8955 : USD 0.7504
14925 : USD 0.7465
26865 : USD 0.7427

533
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 255
Multiples : 1
255 : USD 0.2638
259 : USD 0.2596
263 : USD 0.2555
263 : USD 0.2551
500 : USD 0.2549

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the MIC94050YM4-TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MIC94050YM4-TR and other electronic components in the MOSFETs category and beyond.

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MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate SymFET P-channel MOSFETs that provide low on-resistance in a very small package. Features Designed for high-side switch applications where space is 0.125 typical on-resistance critical, the MIC94050/1 exhibits an on-resistance of typically at 4.5V gate-to-source voltage 0.125 at 4.5V gate-to-source voltage. The MIC94050/1 also Operates with 1.8V gate-to-source voltage operates with only 1.8V gate-to-source voltage. Separate substrate connection allows reverse-blocking The MIC94050 is the basic 4-lead P-channel MOSFET. The Applications MIC94051 is a variation that includes an internal gate pull- Distributed power management up resistor that can reduce the system parts count in many PCMCIA card power management applications. USB ports The 4-terminal SOT-143 package permits a substrate con- Battery-powered computers, peripherals nection separate from the source connection. This 4-terminal Handheld bar-code scanners conguration improves the (improved heat dissipation) JA Portable communications equipment and makes reverse-blocking switch applications practical. Reverse blocking battery management The small size, low threshold, and low R make the DS(on) Ordering Information MIC94050/1 the ideal choice for PCMCIA, USB, back-up Part Number Temp. Range* Package Pb-FREE battery-power, and distributed power management applica- MIC94050BM4 40C to +150C SOT-143 NO tions. MIC94051BM4 40C to +150C SOT-143 NO MIC94050YM4 40C to +150C SOT-143 YES MIC94051YM4 40 to +150C SOT-143 YES * Operating Junction Temperature Pin Conguration Typical PCB Layout PCB heat sikn D r a i n S u b s t r a t e D plane improves heat dissipation P a r t Part Number Identication S S I d e n t i f i c a t i o n P 5 x MIC94050BM4 P50 MIC94051BM4 P51 MIC94050YM4 P50 G a t e S o u r c e MIC94051YM4 P51 SOT-143 Package (M4) G S PCB traces Schematic Symbol Functional Diagrams S S S o u r c e ~350k Ga t e G S S G SS S u b s t r a t e Internal D r a i n gate-to-source D D pull-up resistor Schematic Symbol MIC94050 MIC94051 SymFET is a trademark of Micrel, Inc. Micrel, Inc. 1849 Fortune Drive San Jose, CA 95131 USA tel + 1 (408) 944-0800 fax + 1 (408) 944-0970 MIC94050/94051 Micrel Absolute Maximum Ratings Operating Ratings Drain-to-Source Voltage 6V Thermal Resistance ................................................................................................................................220C/W Gate-to-Source Voltage ................................................. 6V JA .....................................................................130C/W Continuous Drain Current JC T = 25C (V = 4.5V) ............................................ 1.8A A GS T = 100C (V = 4.5V) .......................................... 1.2A A GS Total Power Dissipation T = 25C ............................................................. 568mW A T = 100C ........................................................... 227mW A Operating Junction Temperature .............. 40C to +150C Storage Temperature ................................ 55C to +150C ESD Rating, Note 2 Electrical Characteristics (Note 1) Symbol Parameter Condition (Note 1) Min Typ Max Units V Gate Threshold Voltage V = V , I = 250A 0.5 1.2 V GS DS GS D I Gate-Body Leakage V = 0V, V = 4.5V, Note 2, Note 3 1 A GSS DS GS R Gate-Source Resistance V = 0V, V = 4.5V, Note 2, Note 4 200 350 500 k GS DS GS C Input Capacitance V = 0V, V = 5.5V 600 pF ISS GS DS I Zero Gate Voltage Drain Current V = 5.5V, V = 0V 1 A DSS DS GS V = 5.5V, V = 0V, T = 85C 5 A DS GS J R Drain-Source On-Resistance V = 4.5V, I = 100mA 0.125 0.160 DS(ON) GS D V = 3.6V, I = 100mA 0.135 0.180 GS D V = 2.5V, I = 100mA 0.165 0.200 GS D V = 1.8V, I = 100mA 0.225 0.320 GS D g Forward Transconductance V = 5.5V, I = 200mA, Note 5 3 S FS DS D Note 1. T = 25C unless noted. Substrate connected to source for all conditions. A Note 2. ESD gate precautions required Note 3. MIC94050 only. Note 4. MIC94051 only. Note 5. Pulse Test: Pulse Width 80s, Duty Cycle 0.5%. MIC94050/94051 2 January 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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