MSDM50-08 Microchip

MSDM50 Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 50 Amp Applications y Three phase rectifiers for power supplies y Rectifiers for DC motor field supplies y Battery charger rectifiers y Input rectifiers for variable frequency drives Circuit + Features ~ y Three phase bridge rectifier ~ y Blocking voltage:800 to 1800V ~ y Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate y Glass passivated chip Module Type TYPE VRRM VRSM MSDM50-08 800V 900V MSDM50-12 1200V 1300V MSDM50-16 1600V 1700V MSDM50-18 1800V 1900V Maximum Ratings Symbol Item Conditions Values Units ID Output current (D.C) Tc=110 50 A Forward surge current, max. t=10mS Tvj =45 460 A IFSM 2 2 Value for fusing 1050 i t A s Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V Tvj Operating Junction Temperature -40 to +150 Tstg Storage Temperature -40 to +150 To terminals(M5) 315% Nm Mounting Torque To heatsink(M5) 515% Nm Weight Approximate Weight 145 g Module Thermal Characteristics Symbol Item Conditions Values Units Thermal Impedance, max. Per Module 0.28 /W Rth(j-c) Electrical Characteristics Values Symbol Item Conditions Units Min. Typ. Max. VFM Forward Voltage Drop, max. T=25 IF =150A 1.45 1.80 V Tvj =25 VRD=VRRM Repetitive Peak Reverse Current, 0.3 mA IRRM max. 5 mA Tvj =150 VRD=VRRM MSDM50-Rev0 www.microsemi.com Oct, 2011 1/3 - MSDM50 Performance Curves 120 200 W A 150 60 100 typ. 50 max. 25 Pvtot IF - - -125 0 0 0 ID 25 A 50 0 VF 0.5 1.0 1.5 V 2.0 Fig2. Power dissipation Fig1. Forward Characteristics 600 0.28 50HZ Zth(j-C A / W 400 0.14 200 0 0 0.001 0.01 0.1 1.0 10 S 100 1 10 cycles 100 Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current 100 A 80 60 40 20 ID 0 0 Tc 50 100 150 Fig5.Forward Current Derating Curve Document Number: MSDM50-Rev0 www.microsemi.com Oct.19, 2011 2/3