MSTC110 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 110Amp Applications Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit 6 Features 7 International standard package 1 2 3 MSTC High Surge Capability Glass passivated chip 5 Simple Mounting 4 Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC110-08 800V 900V MSTC110-12 1200V 1300V MSTC110-16 1600V 1700V Maximum Ratings Symbol Conditions Values Units o I Sine 180 Tc=85 110 A TAV T =45 t=10ms, sine 2250 VJ I A TSM 1900 T =125 t=10ms, sine VJ T =45 t=10ms, sine 25000 2 VJ i t A2s 18000 T =125 t=10ms, sine VJ Visol a.c.50HZ r.m.s. 1min 3000 V Tvj -40 to 130 Tstg -40 to 125 Mt To terminals(M5) 315% Nm Ms To heatsink(M6) 515% Nm T = T , 2/3V ,I =500mA VJ VJM DRM G di/dt 150 A/us Tr<0.5us,tp>6us dv/dt T = T ,2/3V , linear voltage rise 1000 V/us J VJM DRM 2 a Maximum allowable acceleration 50 m/s Weight Module(Approximately) 100 g Thermal Characteristics Symbol Conditions Values Units Rth(j-c) Cont. per thyristor / per module 0.28/0.14 /W Rth(c-s) per thyristor / per module 0.2/0.1 /W Document Number: MSTC110 www.smsemi.com Sep.06,2013 1 MSTC110 Electrical Characteristics Values Symbol Conditions Units Min. Typ. Max. V T=25 I =300A 1.72 V TM TM I /I T =T ,V =V ,V =V 20 mA RRM DRM VJ VJM R RRM D DRM V 0.9 V For power-loss calculations only (T =125 ) TO VJ r T =T 2 m T VJ VJM V T =25 , V =6V 3 V GT VJ D I T =25 , V =6V 150 mA GT VJ D V T =125 , V =2/3V 0.25 V GD VJ D DRM I T =125 , V =2/3V 6 mA GD VJ D DRM I T =25 , R = 33 300 600 mA L VJ G I T =25 , V =6V 150 250 mA H VJ D us tgd T =25, I =1A, di /dt=1A/us 1 VJ G G us tq T =T 100 VJ VJM Document Number: MSTC110 www.smsemi.com Sep.06,2013 2