Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, High input impedance silicon-gate manufacturing process. This combination produces a Low input capacitance device with the power handling capabilities of bipolar transistors Fast switching speeds and with the high input impedance and positive temperature Low on-resistance coefficient inherent in MOS devices. Characteristic of all MOS Free from secondary breakdown structures, this device is free from thermal runaway and thermally- Low input and output leakage induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide range Logic level interfaces ideal for TTL and CMOS of switching and amplifying applications where very low threshold Solid state relays voltage, high breakdown voltage, high input impedance, low input Battery operated systems capacitance, and fast switching speeds are desired. Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Package Options Wafer / Die Options Device NW NJ ND TO-92 TO-243AA (SOT-89) (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) TN0104 TN0104N3-G TN0104N8-G TN1504NW TN1504NJ TN1504ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF15 for layout and dimensions. Product Summary Pin Configurations R I V DRAIN DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) () (A) (V) DRAIN TN0104N3-G 40 1.8 2.0 1.6 SOURCE SOURCE TN0104N8-G 40 2.0 2.0 1.6 DRAIN GATE GATE TO-92 (N3) TO-243AA (SOT-89) (N8) Absolute Maximum Ratings Parameter Value Product Marking Drain-to-source voltage BV DSS SiTN YY = Year Sealed Drain-to-gate voltage BV DGS 0104 WW = Week Sealed Gate-to-source voltage 20V YYWW = Green Packaging O O Operating and storage temperature -55 C to +150 C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device TO-92 (N3) may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. W = Code for Week Sealed TN1LW = Green Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) (N8) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TN0104 Thermal Characteristics I I Power Dissipation D D I I O jc ja DR DRM Package T = 25 C (continuous) (pulsed) C O O ( C/W) ( C/W) (mA) (A) (W) (mA) (A) TO-92 450 2.40 1.0 125 170 450 2.40 TO-243AA (SOT-89) 630 2.90 1.6 15 78 630 2.90 Notes: I (continuous) is limited by max rated T . D j T = 25C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate. A D O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 40 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 0.6 - 1.6 V V = V , I = 500A GS(th) GS DS D O V Change in V with temperature - -3.8 -5.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - 0.1 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current A DSS V = 0.8 Max Rating, DS - - 100 V = 0V, T = 125C GS A - 0.35 - V = 3.0V, V = 20V GS DS I On-state drain current 0.5 1.1 - A V = 5.0V, V = 20V D(ON) GS DS 2.0 2.6 - V = 10V, V = 20V GS DS - 5.0 - V = 3.0V, I = 50mA GS D Both packages - 2.3 2.5 V = 5.0V, I = 250mA Static drain-to-source GS D R DS(ON) on-state resistance TO-92 - 1.5 1.8 V = 10V, I = 1.0A GS D TO-243AA - - 2.0 O R Change in R with temperature - 0.7 1.0 %/ C V = 10V, I = 1.0A DS(ON) DS(ON) GS D G Forward transductance 340 450 - mmho V = 20V, I = 500mA FS DS D C Input capacitance - - 70 ISS V = 0V, GS C Common source output capacitance - - 50 pF V = 20V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 15 RSS t Turn-on delay time - 3.0 5.0 d(ON) V = 20V, DD t Rise time - 7.0 8.0 r I = 1.0A, ns D t Turn-off delay time - 6.0 9.0 d(OFF) R = 25 GEN t Fall time - 5.0 8.0 f TO-92 - 1.2 1.8 V = 0V, I = 1.0A Diode forward voltage GS SD V V SD drop TO-243AA - - 2.0 V = 0V, I = 0.5A GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2