UPS3100E3/TR13 Microchip

UPS3100E3 WWW.Microsemi .COM UPS3100E3 UPS3100e3 3 A High Voltage Schottky Barrier Rectifier KEY FEATURES DESCRIPTION Very low thermal resistance package This UPS3100e3 in the Powermite3 package is a high efficiency Schottky RoHS Compliant with e3 suffix part number rectifier that is also RoHS compliant offering high current/power capabilities Guard-ring-die construction for transient previously found only in much larger packages. They are ideal for SMD protection applications that operate at high frequencies. In addition to its size Efficient heat path with Integral locking advantages, the Powermite3 package includes a full metallic bottom that bottom metal tab eliminates the possibility of solder flux entrapment during assembly and a Low forward voltage unique locking tab act as an efficient heat path to the heat-sink mounting. Full metallic bottom eliminates flux Its innovative design makes this device ideal for use with automatic entrapment insertion equipment. Compatible with automatic insertion Low profile-maximum height of 1mm IMPORTANT: For the most current data, consult MICROSEMIs website: UPS3100E3 WWW.Microsemi .COM UPS3100E3 ELECTRICALS ELECTRICALS UPS3100e3 3 A High Voltage Schottky Barrier Rectifier ELECTRICAL PARAMETERS 25 C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units I = 3 A , T =25 C Forward Voltage (Note 1) F j 0.72 0.76 I = 3 A , T =100 C 0.60 0.64 F j V V F I = 6 A , T =25 C 0.79 0.83 F j I = 6 A , T =100 C 0.68 0.72 F j Reverse Break Down Voltage (Note 1) V I = 0.2 mA 100 V R BR Reverse Current (Note1) V = 100V, T = 25 C 1.5 200 R j A V = 100V, T =100 C 0.5 20 mA I R j F Capacitance C V = 4 V f = 1 MHz 85 pF R T Note: 1 Short duration te Note: 1 Short duration test pulse ust pulse usseedd to minimize self to minimize self heating effe heating effect.ct. Copyright 2007 Microsemi Page 2 10-15-2007 Rev D