QH08TZ600, QH08BZ600 Qspeed Family 600 V, 8 A H-Series PFC Diode Product Summary General Description I 8 A F(AVG) This device has the lowest Q of any 600 V RR V 600 V RRM silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate Q (Typ at 125 C) 25.5 nC RR snubbers. I (Typ at 125 C) 1.9 A RRM Softness t /t (Typ at 125 C) 0.75 B A Applications Power Factor Correction (PFC) boost diode Motor drive circuits Pin Assignment DC-AC inverters NC KKKNC Features C C NC Low Q , low I , low t RR RRM RR KKK High dI /dt capable (1000 A / s) F AA Soft recovery Benefits TO-220AC TO-263AB QH08TZ600 QH08BZ600 Increases efficiency Eliminates need for snubber circuits AA KK Reduces EMI filter component size & count Enables extremely fast switching RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage T = 25 C 600 V RRM J I Average forward current T = 150 C, T = 95 C 8 A F(AVG) J C I Non-repetitive peak surge current 60 Hz, cycle, T = 25 C 80 A FSM C I Non-repetitive peak surge current cycle of t=28 s Sinusoid, T =25 C 350 A C FSM T Operating junction temperature range -55 to 150 C J T Storage temperature -55 to 150 C STG Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 C V Isolation voltage (leads-to-tab) AC, TO-220 2500 V ISOL V Isolation voltage (leads-to-tab) AC, TO-263 1500 V ISOL P Power dissipation T = 25 C 44.6 W D C www.power.com November 2015 QH08TZ600, QH08BZ600 Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220 (only) 62 C/W JA R Junction to case 2.8 C/W JC Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics V = 600 V, T = 25 C - - 250 A R J I Reverse current R V = 600 V, T = 125 C - 0.5 - mA R J I = 8 A, T = 25 C - 2.6 3.15 V F J V Forward voltage F I = 8 A, T = 150 C - 2.23 - V F J C Junction capacitance V = 10 V, 1 MHz - 25 - pF J R Dynamic Characteristics T = 25 C - 11.1 - ns dI/dt = 200 A/ s J t Reverse recovery time RR V = 400 V, I = 8 A R F T = 125 C - 19.5 - ns J T = 25 C - 8.0 13.5 nC dI/dt = 200 A/ s J Q Reverse recovery charge RR = 400 V, I = 8 A V R F T = 125 C - 25.5 - nC J T = 25 C - 1.14 1.7 A Maximum reverse dI/dt = 200 A/ s J I RRM recovery current V = 400 V, I = 8 A R F T = 125 C - 1.9 - A J T = 25 C - 0.7 - t J B dI/dt = 200 A/ s Softness factor = S V = 400 V, I = 8 A R F T = 125 C - 0.75 - tA J Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-300.) VR D1 L1 DUT I t F RR 15V dI /dt Pulse generator + F Rg t t a b Q1 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit. Figure 1. Reverse Recovery Definitions. 2 Rev 1.3 11/15