QH12TZ600, QH12BZ600 Qspeed Family 600 V, 12 A H-Series PFC Diode Product Summary General Description I 12 A F(AVG) This device has the lowest Q of any 600 V RR V 600 V RRM silicon diode. Its recovery characteristics Q (Typ at 125 C) 30 nC increase efficiency, reduce EMI and eliminate RR snubbers. I (Typ at 125 C) 2.2 A RRM Softness t /t (Typ at 125 C) 0.65 B A Applications Power Factor Correction (PFC) boost diode Pin Assignment Motor drive circuits DC-AC inverters NC KKKNC Features C C NC KKK Low Q , low I , low t RR RRM RR AA High dI /dt capable (1000 A / s) F Soft recovery TO-220AC TO-263AB QH12TZ600 QH12BZ600 Benefits Increases efficiency AA KK Eliminates need for snubber circuits Reduces EMI filter component size & count RoHS Compliant Package uses Lead-free plating and Enables extremely fast switching Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage T = 25 C 600 V RRM J I Average forward current T = 150 C, T = 90 C 12 A F(AVG) J C I Non-repetitive peak surge current 60 Hz, cycle, T = 25 C 100 A FSM C I Non-repetitive peak surge current cycle of t = 28 s Sinusoid, T = 25 C 350 A C FSM T Operating junction temperature range -55 to 150 C J T Storage temperature -55 to 150 C STG Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 C V Isolation voltage (leads-to-tab) AC, TO-220 2500 V ISOL V Isolation voltage (leads-to-tab) AC, TO-263 1500 V ISOL P Power dissipation T = 25 C 61 W D C www.power.com November 2015 QH12TZ600, QH12BZ600 Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220 (only) 62 C/W JA R Junction to case 2.05 C/W JC Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics V = 600 V, T = 25 C - - 250 A R J I Reverse current R V = 600 V, T = 125 C - 0.6 - mA R J I = 12 A, T = 25 C - 2.65 3.1 V F J V Forward voltage F I = 12 A, T = 150 C - 2.33 - V F J C Junction capacitance V = 10 V, 1 MHz - 34 - pF J R Dynamic Characteristics T = 25 C - 11.6 - ns dI/dt = 200 A/ s J t Reverse recovery time RR V = 400 V, I = 12 A R F T = 125 C - 20.5 - ns J T = 25 C - 9.2 14 nC dI/dt = 200 A/ s J Q Reverse recovery charge RR V = 400 V, I = 12 A R F T = 125 C - 30 - nC J T = 25 C - 1.27 1.8 A Maximum reverse dI/dt =200 A/ s J I RRM recovery current V = 400 V, I = 12 A R F T = 125 C - 2.2 - A J T = 25 C - 0.6 - t J dI/dt = 200 A/ s B Softness factor = S V = 400 V, I = 12 A T = 125 C - 0.65 - R F J tA Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-300.) t I F RR dI /dt F t t a b 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit. Figure 1. Reverse Recovery Definitions. 2 Rev 1.4 11/15