MCC 2N2222 omponents TM 20736Marilla Street Chatsworth Micro Commercial Components 2N2222A Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating Rating Unit V Collector-Emitter Voltage CEO TO-18 2N2222 30 V 2N2222A 40 V Collector-Base Voltage CBO 2N2222 60 V 2N2222A 75 V Emitter-Base Voltage EBO 2N2222 5.0 V 2N2222A 6.0 I Collector Current (DC) 800 mA C I Peak Collector Current 800 mA CM I Peak Base Current 200 mA BM O T Operating Junction Temperature -55 to +150 C J O T Storage Temperature -55 to +150 C STG Thermal Characteristics Symbol Rating MaxUnit Total power Dissipation T 25 P A tot 500 mW T 25 C 1.2 W R Thermal Resistance, Junction to Case 146 K/W JC R Thermal Resistance, Junction to Ambient 350 K/W JA O Electrical Characteristics 25 C Unless Otherwise Specified Symbol Parameter MinMaxUnits OFF CHARACTERISTICS Collector cut-off current (V =50Vdc, I =0) 2N2222 CB E --- 10 nAdc (V =50Vdc, I =0,T =150 ) I CB E A CBO --- 10 uAdc (V =60Vdc, I =0) 2N2222A CB E --- 10 nAdc DIMENSIONS (V =60Vdc, I =0,T =150 ) CB E A --- 10 uAdc INCHES MM Emitter Cut-off current --- 10 nAdc I DIM MIN MAX MIN MAX NOTE EBO (I =0, V =3Vdc) C EB A .209 .230 5.309 5.842 DC Current Gain B .178 .195 4.521 4.953 (I =0.1mAdc, V =10Vdc) 35 C CE C .170 .210 4.318 5.334 (I =1.0mAdc, V =10Vdc) 50 C CE h FE D .50 ---- 12.7 ---- (I =10mAdc, V =10Vdc) 75 C CE E .100 2.54 TYP (I =150mAdc, V =1.0Vdc)* 50 C CE F .028 .048 .7112 1.219 (I =150mAdc, V =10Vdc)* 100 300 C CE G ----- .050 ----- 1.27 DC Current Gain H .009 .031 0.229 0.787 h (I =500mAdc, V =10Vdc) * 2N2222 30 --- FE C CE J 44 46 44 46 2N2222A 40 --- K .036 .046 0.914 1.168 Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. L .016 .021 0.406 0.533 www.mccsemi.com 1 of 3 Revision: A 2011/01/01MCC 2N2222,2N2222A TM Micro Commercial Components Symbol Parameter MinMaxUnits ON CHARACTERISTICS* V Collector-Emitter Saturation Voltage8 CE(sat) (I =150mAdc, I =15mAdc) 2N2222 --- 400 mVdc C B (I =500mAdc, I =50mAdc) --- 1.6 Vdc C B V Collector-Emitter Saturation Voltage* CE(sat) (I =150mAdc, I =15mAdc) 2N2222A --- 300 mVdc C B (I =500mAdc, I =50mAdc) --- 1.0 Vdc C B VBE(sat) Base-Emitter Saturation Voltage * (I =150mAdc, I =15mAdc) 2N2222 --- 1.3 Vdc C B (I =500mAdc, I =50mAdc) --- 2.6 Vdc C B V Base-Emitter Saturation Voltage* BE(sat) (I =150mAdc, I =15mAdc) 2N2222A 0.6 1.2 Vdc C B (I =500mAdc, I =50mAdc) --- 2.0 Vdc C B SMALL-SIGNAL CHARACTERISTICS C Output Capacitance OB (VCB=10Vdc,IE=ie=0, f=1.0MHz) --- 8.0 pF f TransitionFrequency T (VCE=20Vdc,IC=20mAdc, f=100MHz) 2N2222 250 --- MHz 2N2222A 300 --- MHz NF Noise Figure (VCE=5.0Vdc,IC=200uAdc, Rs=2.0KOHM,f=1.0kHz,B=200Hz) 2N2222A --- 4.0 dB SWITCHING CHARACTERISTICS T Delay Time --- d 10 ns t Rise Time --- r 25 ns I =150mAdc, CON t Storage Time I =15mAdc, I =15mAdc --- s BON B(off) 200 ns t Fall Time --- f 60 ns * Pulse Test: tp 300us, Duty Cycle 2.0% www.mccsemi.com 2 of 3 Revision: A 2011/01/01