X-On Electronics has gained recognition as a prominent supplier of 2N3906-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3906-AP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3906-AP Micro Commercial Components (MCC)

2N3906-AP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.2N3906-AP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 600 mW Through Hole TO-92
Datasheet: 2N3906-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0379 ea
Line Total: USD 0.76 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
23692
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2882
10 : USD 0.1914
100 : USD 0.1529
1000 : USD 0.0946
2500 : USD 0.0836
10000 : USD 0.0737
20000 : USD 0.0715
40000 : USD 0.0715
100000 : USD 0.0682

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3906-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3906-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3906 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 2 08/W Junction to Ambient Parameter Symbol Rating Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO TO-92 Continuous Collector Current I -200 mA C P Power Dissipation 600 mW D A E Internal Structure B 1 2 3 G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM2N3906 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -40 V I =-10A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V -40 V I =-1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-10A, I =0 (BR)EBO E C Base Cutoff Current I -0.05 A V =-30V, V =-3V BL CE BE Collector Cut-off Current I -0.05 A V =-30V, V =-3V CEX CE BE h V =-1V, I =-0.1mA 60 FE(1) CE C h V =-1V, I =-1mA 80 FE(2) CE C h V =-1V, I =-10mA DC Current Gain* 100 300 FE(3) CE C h V =-1V, I =-50mA 60 FE(4) CE C h V =-1V, I =-100mA 30 FE(5) CE C I =-10mA, I =-1mA -0.25 V C B V Collector-Emitter Saturation Voltage CE(sat) I =-50mA, I =-5mA -0.4 V C B I =-10mA, I =-1mA -0.65 -0.85 V C B Base-Emitter Saturation Voltage V BE(sat) -0.95 V I =-50mA, I =-5mA C B Transition Frequency f 250 MHz V =-20V, I =-10mA, f=100MHz) T CE C Delay Time t 35 ns d V =-3V, V =-0.5V, I =-10mA, I =- CC BE C B1 1mA Rise Time t 35 ns r Storage Time t 225 ns s V =-3V, I =-10mA, I =I =-1mA CC C B1 B2 t Fall Time 75 ns f *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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