X-On Electronics has gained recognition as a prominent supplier of 2N4401-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4401-AP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N4401-AP Micro Commercial Components (MCC)

2N4401-AP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.2N4401-AP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 250MHz 600 mW Through Hole TO-92
Datasheet: 2N4401-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4466 ea
Line Total: USD 0.45 
Availability - 54850
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6517
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 610
Multiples : 1
610 : USD 0.5008
2500 : USD 0.4476
10000 : USD 0.4437
20000 : USD 0.1525

54850
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4466
10 : USD 0.4202
100 : USD 0.3762
1000 : USD 0.3586
2500 : USD 0.3212
10000 : USD 0.3179
20000 : USD 0.1166
40000 : USD 0.1078
100000 : USD 0.1023

6517
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 610
Multiples : 1
610 : USD 0.5008

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N4401-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4401-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4401 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO Emitter-Base Voltage V 6 V EBO TO-92 Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D A E Marking: Type Number Internal Structure B 1 2 3 G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM2N4401 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V 40 V I =1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Base Cutoff Current I 0.1 A V =35V, V =0.4V BL CE BE Collector Cut-off Current I 0.1 A V =35V, V =0.4V CEX CE BE h V =1V, I =0.1mA 20 FE(1) CE C h V =1V, I =1mA 40 FE(2) CE C h V =1V, I =10mA DC Current Gain* 80 FE(3) CE C h V =1V, I =150mA 100 300 FE(4) CE C h V =1V, I =500mA 40 FE(5) CE C I =150mA, I =15mA 0.4 V C B V Collector-Emitter Saturation Voltage CE(sat) I =500mA, I =50mA 0.75 V C B I =150mA, I =15mA 0.75 0.95 V C B Base-Emitter Saturation Voltage V BE(sat) 1.2 V I =500mA, I =50mA C B Transition Frequency f 250 MHz V =10V, I =20mA, f=100MHz T CE C Delay Time t 15 ns V =30V, V =0.2V, I =150mA, d CC BE C I =15mA Rise Time t 20 ns B1 r Storage Time t 225 ns s V =30V, I =150mA, I =I =15mA CC C B1 B2 t Fall Time 30 ns f C V =5V, I =0,f=100KHz Collector-Base Capacitance 6.5 pF cb CB E C V =0.5V, I =0, f=100KHz Emitter-Base Capacitance 30 pF eb EB C *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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