X-On Electronics has gained recognition as a prominent supplier of 2N4403-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4403-AP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N4403-AP Micro Commercial Components (MCC)

2N4403-AP electronic component of Micro Commercial Components (MCC)
Images are for reference only
See Product Specifications
Part No.2N4403-AP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Micro Commercial Components (MCC) Bipolar Transistors - BJT 40V
Datasheet: 2N4403-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 0.0214
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MOQ : 1
Multiples : 1
1 : USD 0.0222
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MOQ : 2000
Multiples : 2000
2000 : USD 0.1625
6000 : USD 0.1465
10000 : USD 0.1371
50000 : USD 0.121
100000 : USD 0.1182
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MOQ : 1
Multiples : 1
1 : USD 0.575
10 : USD 0.444
100 : USD 0.3025
500 : USD 0.2269
1000 : USD 0.1702
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0
MOQ : 2000
Multiples : 2000
2000 : USD 0.0198
8000 : USD 0.019
20000 : USD 0.019
50000 : USD 0.019
80000 : USD 0.019
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6622
10 : USD 0.5379
100 : USD 0.2884
500 : USD 0.2186
1000 : USD 0.1717
2500 : USD 0.1516
10000 : USD 0.1367
20000 : USD 0.129
40000 : USD 0.1264
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0
MOQ : 2000
Multiples : 2000
2000 : USD 0.0348
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2N4403-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4403-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4403 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO Emitter-Base Voltage V -5 V EBO TO-92 Continuous Collector Current I -600 mA C Power Dissipation P 625 mW D A E Marking:Type Number B Internal Structure 1 2 3 G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM2N4403 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -40 V I =-100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V -40 V I =-1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cut-off Current I -0.1 A V =-35V, I =0 CBO CE E Collector Cut-off Current I -0.1 A V =-5V, I =0 EBO EB C h V =-1V, I =-0.1mA 30 FE(1) CE C h V =-1V, I =-1mA 60 FE(2) CE C h V =-1V, I =-10mA DC Current Gain* 100 FE(3) CE C h V =-1V, I =-150mA 100 300 FE(4) CE C h V =-2V, I =-500mA 20 FE(5) CE C I =-150mA, I =-15mA -0.4 V C B V Collector-Emitter Saturation Voltage CE(sat) I =-500mA, I =-50mA -0.75 V C B I =-150mA, I =-15mA -0.75 -0.95 V C B Base-Emitter Saturation Voltage V BE(sat) -1.3 V I =-500mA, I =-50mA C B Transition Frequency f 200 MHz V =-10V, I =-20mA, f=100MHz T CE C Delay Time t 15 ns d V =-3V, V =-2V, I =-150mA, I =- CC BE C B1 15mA Rise Time t 20 ns r Storage Time t 225 ns s V =-3V, I =-150mA, I =I =-15mA CC C B1 B2 t Fall Time 30 ns f C V =-10V, I =0,f=140KHz Collector-Base Capacitance 8.5 pF cb CB E C V =-0.5V, I =0, f=140KHz Emitter-Base Capacitance 30 pF eb EB C *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components

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