2N5551 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 NPN General Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Purpose Amplifier Compliant. See Ordering Information) Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO Emitter-Base Voltage V 6 V EBO TO-92 Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D A E Marking:Type Number Internal Structure B 1 2 3 G C B 1.EMITTER C 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-1-01012019 1/4 MCCSEMI.COM2N5551 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 180 V I =100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V 160 V I =1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C 0.05 A V =35V, I =0 CB E Collector Cut-off Current I CBO 50 A V =120V, I =0, T =100 CB E A I V =5V, I =0 Emitter Cut-off Current 0.05 A EBO EB C h V =5V, I =1mA 80 FE(1) CE C h V =5V, I =10mA DC Current Gain* 80 300 FE(2) CE C h V =5V, I =50mA 30 FE(3) CE C V I =50mA, I =5mA Collector-Emitter Saturation Voltage 0.5 V CE(sat) C B V I =50mA, I =5mA Base-Emitter Saturation Voltage 1V BE(sat) C B f V =10V, I =10mA Transition Frequency 100 300 MHz T CE C C V =10V, I =0,f=1MHz Collector Output Capacitance 6pF ob CB E Input Capacitance C 20 pF V =10V, I =0, f=1MHz ibo CE C *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-1-01012019 2/4 MCCSEMI.COM