X-On Electronics has gained recognition as a prominent supplier of BC846B-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846B-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC846B-TP Micro Commercial Components (MCC)

BC846B-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.BC846B-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 225 mW Surface Mount SOT-23
Datasheet: BC846B-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0248 ea
Line Total: USD 74.4 
Availability - 174600
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
4410
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0935
10 : USD 0.0572
100 : USD 0.0308
1000 : USD 0.0275
3000 : USD 0.022
9000 : USD 0.0209
24000 : USD 0.0198

8953
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 25
Multiples : 5
25 : USD 0.0588
100 : USD 0.0392
500 : USD 0.0238
895 : USD 0.0196
2460 : USD 0.0182

715860
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 3000
6000 : USD 0.0182
372000 : USD 0.0166
558000 : USD 0.0155

174600
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0248
6000 : USD 0.0234
9000 : USD 0.0171
15000 : USD 0.0169
21000 : USD 0.0168
30000 : USD 0.0159
75000 : USD 0.0153
150000 : USD 0.0144
300000 : USD 0.0143

2910000
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 12000
Multiples : 3000
12000 : USD 0.0115

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC846B-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846B-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846A THRU BC84 9C Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Maximum Thermal Resistance:625/W Junction to Ambient SOT-23 Parameter Symbol Rating Unit A D V Collector-Base Voltage V CBO BC846A-BC846C 80 BC847A-BC847C B 50 C 30 BC848A-BC848C,BC849B-BC849C V Collector-Emitter Voltage V CEO F E BC846A-BC846C 65 BC847A-BC847C 45 30 BC848A-BC848C,BC849B-BC849C G H J V 6 Emitter-Base Voltage V L EBO K Collector Current I 100 mA C ( Note2) DIMENSIONS P 225 mW Collector Power Dissipation T =25 C A INCHES MM DIM NOTE Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, MIN MAX MIN MAX <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. A 0.110 0.120 2.80 3.04 2. Transistor mounted on an FR4 printed-circuit board B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 Internal Structure H 0.035 0.043 0.90 1.10 C J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 Marking: L 0.007 0.020 0.20 0.50 BC846A:1A BC846B:1B BC846C:1C B E BC847A:1E BC847B:1F BC847C:1G Suggested Solder Pad Layout BC848A:1J BC848B:1K BC848C:1L 0.031 BC849B:49B BC849C:49C 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-8-10112021 1/4 MCCSEMI.COMBC846A THRU BC84 9C Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage BC846A-BC846C 80 V I =10A, I =0 V (BR)CBO C E BC847A-BC847C 50 BC848A-BC848C,BC849B-BC849C 30 Collector-Emitter Breakdown Voltage BC846A-BC846C 65 V I =10mA, I =0 V (BR)CEO C B BC847A-BC847C 45 BC848A-BC848C,BC849B-BC849C 30 Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C Collector Cut-off Current BC846A-BC846C V =70V, I =0 CB E I 0.1 A CBO BC847A-BC847C V =50V, I =0 CB E BC848A-BC848C,BC849B-BC849C V =30V, I =0 CB E Emitter Cutoff Current BC846A-BC846C V =60V, I =0 CE B I 0.1 A CEO BC847A-BC847C V =45V, I =0 CE B BC848A-BC848C,BC849B-BC849C V =30V, I =0 CE B Emitter Cutoff Current I 0.1 A V =5V, I =0 EBO EB C DC Current Gain BC846A/BC847A/BC848A 90 h V =5V, I =10A FE(1) CE C BC846B/BC847B/BC848B/BC849B 150 BC846C/BC847C/BC848C/BC849C 400 DC Current Gain BC846A/BC847A/BC848A 110 220 h V =5V, I =2mA FE(2) CE C BC846B/BC847B/BC848B/BC849B 200 450 BC846C/BC847C/BC848C/BC849C 420 800 I =10mA, I =0.5mA 0.25 V C B V Collector-Emitter Saturation Voltage CE(sat) I =100mA, I =5mA 0.5 V C B I =10mA, I =0.5mA 0.7 V C B V Base-Emitter Saturation Voltage BE(sat) I =100mA, I =5mA 0.9 1.1 V C B V =5V, I =2mA 0.58 0.66 0.7 V CE C V Base-Emitter On Voltage BE(on) V =5V, I =10mA 0.77 V CE C f V =5V, I =10mA, f=100MHz Transition Frequency 100 MHz T CE C C V =10V, I =0, f=0.1MHz Collector Output Capacitance 4.5 pF ob CB E I =0.2mA, V =5.0V, R =2.0k, C CE S NF Noise Figure 10 dB f=1.0kHz, BW=200Hz Rev.3-8-10112021 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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