BC847AT/BC847BT/BC847CT Features Epitaxial Die Construction Complementary PNP Type Available (BC857AT/BT/CT) NPN Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Small Signal Epoxy Meets UL 94 V-0 Flammability Rating Surface Mount Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-523 (Note2) Thermal Resistance: 833/W Junction to Ambient A Parameter Symbol Rating Unit D V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO C B V Emitter-Base Voltage 6 V EBO Collector Current I 100 mA C E (Note2) Collector Power Dissipation P 150 mW C G J H Classification Of h FE K Rank BC847AT BC847BT BC847CT Range 110-222 200-450 420-800 DIMENSIONS Marking 1E 1F 1G INCHES MM DIM NOTE MIN MAX MIN MAX Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, A 0.059 0.067 1.50 1.70 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. B 0.030 0.033 0.75 0.85 0.057 0.069 1.45 1.75 2. Device mounted on FR-4 PCB with recommended pad layout C 0.020 0.50 TYP. D E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 J 0.004 0.008 0.10 0.20 K 0.006 0.014 0.15 0.35 Internal Structure Suggested Solder Pad Layout 1.0 C (mm) 0.4 0.6 B E 1.24 0.6 0.5 Rev.3-3-12012020 1/4 MCCSEMI.COMBC8 47AT/BC8 47BT/BC8 47CT Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =10A, I =0 50 V Collector-Base Breakdown Voltage (BR)CBO C E V 45 V I =10mA, I =0 Collector-Emitter Breakdown Voltage (BR)CEO C B V 6 V I =1A, I =0 Emitter-Base Breakdown Voltage (BR)EBO E C V =30V, I =0 15 nA CB E I Collector-Base Cutoff Current CBO 5 A V =30V, I =0, T =125 CB E J 110 222 BC847AT (Note3) h 200 290 450 V =5V, I =2mA BC847BT FE CE C DC Current Gain 420 520 800 BC847CT I =10mA, I =0.5mA 0.25 V C B V Collector-Emitter Saturation Voltage CE(sat) I =100mA, I =5mA 0.6 V C B 0.70 V I =10mA, I =0.5mA C B V Base-Emitter Saturation Voltage BE(sat) 0.90 V I =100mA, I =5mA C B V =5V, I =2mA 0.58 0.66 0.70 V CE C V Base-Emitter Voltage BE V =5V, I =10mA 0.77 V CE C Transition Frequency f 100 MHz V =5V, I =10mA, f=100MHz T CE C Collector-Base Capacitance C 4.5 pF V =10V, f=1MHz CBO CB BC847BT 10 dB V =5V, I =0.2mA CE C Noise Figure NF R =2K, f=1KHz, BW=200Hz BC847CT 4 dB S Note: 3. Short duration pulse test used to minimize self-heating effect . Rev.3-3-12012020 2/4 MCCSEMI.COM