M C C R Micro Commercial Components omponents 20736 Marilla Street Chatsworth BC847B M Features Halogen free available upon request by adding suffix-H NPN Low Current Low Voltage Plastic-Encapsulate Ultra-small Surface Mount Package Transistors Lead Free Finish/RoHS Compliant Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 SOT- 883 Marking:D5 O Maximum Ratings 25 C Unless Otherwise Specified Symbol Rating Rating Unit D V Collector-Emitter Voltage 45 V A CEO V Collector-Base Voltage 50 V B CBO V Emitter-Base Voltage 6 V EBO C I Collector Current 0.1 A C Thermal Resistance Junction to Ambient 1250 /W R E JA L N T Operating Junction Temperature -55 to +150 J M M T Storage Temperature -55 to +150 STG O K F Electrical Characteristics 25 C Unless Otherwise Specified G Symbol Parameter MinTypMaxUnits 1. BASE V Collector-Emitter Breakdown Voltage 2. EMITTER (BR)CEO H 45 --- --- Vdc (I =10mAdc, I =0) C B J 3. COLLECTOR V Collector-Base Breakdown Voltage (BR)CBO 50 --- --- Vdc (I =10Adc, I =0) DIMENSIONS C E V Collector-Emitter Breakdown Voltage (BR)EBO 6 --- --- Vdc MM INCHES (I =1 Adc, I =0) E C DIM MAX NOTE MIN MAX MIN I Collector Cutoff Current CBO --- --- 15 nAdc A 0.018 0.022 0.450 0.550 (V =30Vdc, I =0Vdc) CB E 0.000 0.004 0.010 0.100 B I Emitter Cutoff Current EBO --- --- 15 nAdc 0.037 0.041 C 0.950 1.050 (V =5Vdc, I =0Vdc) EB C 0.022 0.026 0.550 0.650 D h DC Current Gain FE 220 --- 475 --- 0.018REF. 0.450REF. E (I =2mAdc, V =5Vdc) C CE 0.450REF. 0.018REF. F V Collector-Emitter Saturation Voltage CE(sat) G 0.011 0.015 0.270 0.370 (I =10mAdc, I =0.5mAdc) --- --- 200 mVdc C B 0.004 0.008 0.100 0.200 H (I =100mAdc, I =5mAdc) --- --- 400 C B J 0.025REF. 0.635REF. V Base-Emitter Saturation Voltage BE(sat) 0.300 0.400 K 0.012 0.016 (I --- 700 --- mVdc C=10mAdc, IB=0.5mAdc) 0.008 0.012 0.200 0.300 L (I =100mAdc, I =5mAdc) --- 900 --- C B 0.002REF. 0.050REF. M Base-Emitter Voltage N 0.011 0.015 0.270 0.370 V (I =2mAdc, V =5Vdc) --- --- 700 mVdc BE C CE (I =10mAdc, V =5Vdc) 770 C CE Transition Frequency f 100 --- --- MHz T (V =5Vdc, I =10mAdc, f=100MHz) CE C Output Capacitance C --- 2.5 --- pF ob (V =10Vdc, f=1.0MHz, I =0) CB E Noise Figure NF --- --- 10 dB (V =5V,I =0.2mA,f=1KHz,R =1k ,B=200Hz) CE E S www.mccsemi.com 1 of 4 Revision: A 2016/01/29M C C R Micro Commercial Components Typical Characteristics h I Static Characteristic FE C 8 1000 COMMON T =100 a EMITTER T =25 a 20uA 6 18uA T =25 a 16uA 14uA 4 100 12uA 10uA 8uA 2 6uA 4uA COMMON EMITTER I =2uA V = 5V CE B 0 10 0 2 4 6 8 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 1 2 1 T =25 a 0.1 T =100 T =100 a a T =25 a =20 =20 0.01 0.1 0.1 1 10 100 0.1 1 10 100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C 100 1000 T =100 a 10 100 T =25 a 1 10 COMMON EMITTER COMMON EMITTER V =5V CE V = 5V T =25 CE a 0.1 1 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 BASE-EMMITER VOLTAGE V (V) COLLECTOR CURRENT I (mA) BE C www.mccsemi.com Revision: A 2016/01/29 2 of 4 COLLECTOR-EMITTER SATURATION VOLTAGE V (V) CEsat COLLECTOR CURRENT I (mA) C COLLECTOR CURRENT I (mA) C BASE-EMITTER SATURATION VOLTAGE V (V) DC CURRENT GAIN h TRANSITION FREQUENCY f (MHz) BEsat FE T