BC847BS Features For Switching and AF Amplifier Applications Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 417/W Junction to Ambient SOT-363 Parameter Symbol Rating Unit V G Collector-Base Voltage 50 V CBO Collector-Emitter Voltage V 45 V CEO C B Emitter-Base Voltage V 6 V EBO I Collector Current 100 mA C I Peak Collector Current 200 mA CM A M Power Dissipation P 300 mW H D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. J D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 6 5 4 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 Marking: 1C K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 2 3 1 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-4-12012020 1/4 MCCSEMI.COMBC847BS Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 50 V I =10A, I =0 (BR)CBO C E V I =10mA, I =0 Collector-Emitter Breakdown Voltage 45 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I 15 nA V =30V, I =0 Collector-Base Cutoff Current CBO CB E I 100 nA V =5V, I =0 Emitter-Base Cutoff Current EBO EB C (2) h V =5V, I =2mA DC Current Gain 200 450 FE CE C I =10mA, I =0.5mA 0.25 V C B V Collector-Emitter Saturation Voltage CE(sat) 0.65 V I =100mA, I =5mA C B 0.7 V I =10mA, I =0.5mA C B V Base-Emitter Saturation Voltage BE(sat) I =100mA, I =5mA 0.9 V C B V V =5V, I =2mA Base-Emitter Voltage 0.58 0.665 0.7 V BE CE C f V =5V, I =10mA, f=100MHz Transition Frequency 200 MHz T CE C Output Capacitance C 2 pF V =10V, I =0, f=1MHz ob CB E Note: 2.Pluse Width 300s, Duty Cycle 2.0% Rev.3-4-12012020 2/4 MCCSEMI.COM