MCC BC846AW/BW Micro Commercial Components omponents BC847AW/BW/CW 20736 Marilla Street Chatsworth BC848AW/BW/CW Features Lead Free Finish/RoHS Compliant Suffix designates NPN RoHS Compliant. See ordering information) Low current (max. 100mA) Low voltage (max. 65V) General Purpose Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors Halogen free available upon request by adding suffix-H Maximum Ratings Operating temperature : -65 to +150 SOT-323 Storage temperature : -65 to +150 A Thermal resistance from junction to ambient*: 625K/W D C Marking: BC846AW---1A BC846BW---1B BC847AW---1E BC847BW---1F BC847CW---1G C B BC848AW---1JS/1J BC848BW---1KS/1K BC848CW---1LS/1L E B Electrical Characteristics 25 Unless Otherwise Specified F E Symbol Parameter Min MaxUnits OFF CHARACTERISTICS V Collector-Base Breakdown Voltage Vdc (BR)CBO G H J (I =10Adc, IE=0) C BC846AW/BW --- 80 BC847AW/BW/CW --- 50 K BC848AW/BW/CW --- 30 DIMENSIONS V Collector-Emitter Breakdown Voltage Vdc (BR)CEO (IC=10 mAdc, IB=0) INCHES MM BC846AW/BW --- 65 DIM MIN MAX MIN MAX NOTE BC847AW/BW/CW --- 45 A .071 .087 1.80 2.20 BC848AW/BW/CW --- 30 B .045 .053 1.15 1.35 C .083 .096 2.10 2.45 V Emitter-Base Breakdown Voltage Vdc (BR)EBO D .026 Nominal 0.65Nominal (I =1Adc, I =0) E C E .047 .055 1.20 1.40 BC846AW/BW, BC847AW/BW/CW --- 6 F .012 .016 .30 .40 BC848AW/BW/CW --- 5 G .000 .004 .000 .100 I Collector Current (DC) --- 100 mAdc C H .035 .039 .90 1.00 J .004 .010 .100 .250 I Peak Collector Current --- 200 mAdc CM K .006 .016 .15 .40 I Peak Base Current --- 200 mAdc BM Suggested Solder * Transistor mounted on an FR4 printed-circuit board Pad Layout 0.70 0.90 1.90 i nches mm 0.65 0.65 www.mccsemi.com Revision: C 2013/09/24 1 of 5MCC TM Micro Commercial Components ON CHARACTERISTICS Symbol Parameter Min Typ Max Units I Collector-base Cut-off Current CBO (I =0, V =30Vdc) CE CB --- --- 15 nA (I =0, V =30Vdc, T =150 ) CE CB j --- --- 5 A I Emitter-base Cut-off Current EBO (I =0, V =5Vdc) --- --- 100 nA C EB V Collector-Emitter Saturation Voltage CE(sat) (I =10mAdc, I =0.5mAdc) --- 90 250 mVdc C B (I =100mAdc, I =5mAdc*) --- 200 600 mVdc C B V Base-Emitter Saturation Voltage BE(sat) (I =10mAdc,I =0.5mAdc) --- 700 --- mVdc C B (I =100mAdc, I =5mAdc*) --- 900 --- mVdc C B h DC Current Gain (I =10A V =5V) FE C CE BC846AW BC847AW BC848AW --- 90 --- BC846BW BC847BW BC848BW --- 150 --- BC847CW BC848CW --- 270 --- DC Current Gain (I =2mA V =5V) C CE BC846AW BC847AW BC848AW 110 180 220 BC846BW BC847BW BC848BW 200 290 450 BC847CW BC848CW 420 520 800 V Base-emitter Voltage BE (I =2mAdc,V =5V) 580 660 700 mVdc C CE (I =10mAdc,V =5V) --- --- 770 mVdc C CE Cc Collector Capacitance (V =10V I =I =0 f=1MHz) --- --- 4.5 pF CB E e f Transition Frequency (V =5V I =10mA f=100MHz) 100 --- --- MHz T CE C F Noise Figure (V =5V I =200A f=1KHz B=200Hz R =2K ) --- --- 10 dB CE C S * Pulse test: t 300s 0.02 P www.mccsemi.com Revision: C 2013/09/24 2 of 5