X-On Electronics has gained recognition as a prominent supplier of BC856BM-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC856BM-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC856BM-TP Micro Commercial Components (MCC)

BC856BM-TP electronic component of Micro Commercial Components (MCC)
Images are for reference only
See Product Specifications
Part No.BC856BM-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Plastic-Encapsulate Biploar Transistors,SOT-883 package
Datasheet: BC856BM-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3412
10 : USD 0.3002
100 : USD 0.0564
1000 : USD 0.0287
2500 : USD 0.0246
10000 : USD 0.0216
20000 : USD 0.0205
50000 : USD 0.0185
100000 : USD 0.0174
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC856BM-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC856BM-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856 BM Features Ultra-Small Suface Mount Package Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified SOT-883 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 1250/W Junction to Ambient D A B Parameter Symbol Rating Unit C V Collector-Base Voltage -80 V CBO E L N M M V Collector-Emitter Voltage -65 V CEO V Emitter-Base Voltage -5 V EBO K F G Collector Current I -100 mA C H J Collector Power Dissipation P 100 mW C DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.018 0.022 0.45 0.55 Internal Structure B 0.000 0.004 0.01 0.10 C 0.037 0.041 0.95 1.05 D 0.022 0.026 0.55 0.65 0.018 0.450 E REF. F 0.018 0.450 REF. G 0.011 0.015 0.27 0.37 H 0.004 0.008 0.10 0.20 1. BASE 0.025 0.635 J REF. 2. EMITTER K 0.012 0.016 0.30 0.40 Marking: D1 3. COLLECTOR L 0.008 0.012 0.20 0.30 0.002 0.050 M REF. N 0.011 0.015 0.27 0.37 Suggested Solder Pad Layout (mm) 0.55 0.50 Rev.3-1-01012019 1/4 MCCSEMI.COM 0.35 0.20 0.20 0.35BC856 BM Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-10A, I =0 Collector-Base Breakdown Voltage -80 V (BR)CBO C E V I =-10mA, I =0 Collector-Emitter Breakdown Voltage -65 V (BR)CEO C B V I =-1A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I V =-70V, I =0 Collector-Base Cutoff Current -100 nA CBO CB E Collector-Emitter Cutoff Current I -100 nA V =-60V, I =0 CEO CB B Emitter-Base Cutoff Current I -100 nA V =-5V, I =0 EBO EB C DC Current Gain h 220 475 V =-5V, I =-2mA FE CE C Collector-Emitter Saturation Voltage V -0.5 V I =-100mA, I =-5mA CE(sat) C B Base-Emitter Saturation Voltage V -1.1 V I =-100mA, I =-5mA BE(sat) C B Collector Output Capacitance C 4.5 pF V =-10V, I =0, f=1MHz ob CB E Transition Frequency f 100 MHz V =-5V, I =-10mA, f=100MHz T CE C Rev.3-1-01012019 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components

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