BC856A,BC856B Features For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix-H PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A (Note1) D Thermal Resistance: 320/W Junction to Solder-point (Note1) Thermal Resistance: 403/W Junction to Ambient B C Parameter Symbol Rating Unit V Collector-Base Voltage -80 V CBO F E V Collector-Emitter Voltage -65 V CEO V Emitter-Base Voltage -5 V EBO G H J Collector Current I -100 mA C L K I Peak Collector Current -200 mA CM I Peak Emitter Current -200 mA EM DIMENSIONS (Note1) P INCHES MM Power Dissipation T =50 310 mW D S DIM NOTE MIN MAX MIN MAX Note: 1. Package Mounted 1.0*1.0mm Pad Layout 1oz Copper That is On a A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Single-sided FR4 PCB. C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 Part Number BC856A BC856B F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 Marking 3A 3B H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 Internal Structure L 0.007 0.020 0.20 0.50 C Suggested Solder Pad Layout 0.031 0.800 0.035 E B 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-1-01012019 1/4 MCCSEMI.COMBC856A,BC856B Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions (Note2) V I =-10A, I =0 -80 V Collector-Base Breakdown Voltage (BR)CBO C E (Note2) V I =-10mA, I =0 -65 V Collector-Emitter Breakdown Voltage (BR)CEO C B (Note2) V -5 V I =-1A, I =0 Emitter-Base Breakdown Voltage (BR)EBO E C I -15 nA V =-80V CES CE (Note2) -15 nA V =-30V Collector-Cutoff Current CB I CBO -4 A V =-30V, T =150 CB A BC856 A 125 180 250 (Note2) h V =-5Vdc, I =-2mA DC Current Gain FE CE C BC856 B 220 290 475 BC856 A 200 Small Signal Current Gain h fe BC856 B 330 BC856 A 2.7 h Input Impedance K ie V =-5V CE BC856 B 4.5 I =-2mA C BC856 A 18 f=1KHz h Output Admittance S oe BC856 B 30 -4 BC856 A 1.5x10 Reverse Voltage Transfer Ratio h re -4 BC856 B 2x10 I =-10mA, I =-0.5mA -75 -300 mV C B (Note2) V Collector-Emitter Saturation Voltage CE(sat) I =-100mA, I =-5mA -250 -650 mV C B I =-10mA, I =-0.5mA -700 mV C B (Note2) V Base-Emitter Saturation Voltage BE(sat) -850 mV I =-100mA, I =-5mA C B -600 -650 -750 mV V =-5V, I =-2mA CE C (Note2) V Base-Emitter Voltage BE -820 mV V =-5V, I =-10mA CE C Current Gain-Bandwidth Product f 100 200 MHz V =-5V, I =-10mA, f=100MHz T CE C C V =-10V, f=1MHz Collector-Base Capacitance 3 pF CBO CB V =-5V, I =-200A CE C Noise Figure NF 2 10 dB R =2K, f=1KHz, f=200Hz S Note: 2. Short Duration Pulse Test to Minimize Self-heating Effect. Rev.3-1-01012019 2/4 MCCSEMI.COM