X-On Electronics has gained recognition as a prominent supplier of BC857S-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857S-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857S-TP Micro Commercial Components (MCC)

BC857S-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.BC857S-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Small Signal Bipolar Transistors
Datasheet: BC857S-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2046 ea
Line Total: USD 0.2 
Availability - 6044
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0732
6000 : USD 0.0667
9000 : USD 0.0559
15000 : USD 0.0549
21000 : USD 0.0518
30000 : USD 0.0484
75000 : USD 0.0434
150000 : USD 0.0415

6044
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1375
100 : USD 0.0682
1000 : USD 0.0572
3000 : USD 0.055
9000 : USD 0.044
24000 : USD 0.0418
45000 : USD 0.0407
99000 : USD 0.0385

4588
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 10
Multiples : 10
10 : USD 0.1064
30 : USD 0.1008
100 : USD 0.0798
250 : USD 0.0714
670 : USD 0.0672

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC857S-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857S-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC85 7S Features Muti-Chip Transistor Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified SOT-363 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 G Thermal Resistance: 417/W Junction to Ambient C B Parameter Symbol Rating Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO A M V Emitter-Base Voltage -5 V H EBO Collector Current I -200 mA C K L Collector Power Dissipation P 300 mW C J D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C B E 1 2 2 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 Marking: 3C E B C 1 1 2 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMBC85 7S Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -50 V I =-10A, I =0 (BR)CBO C E V I =-10mA, I =0 Collector-Emitter Breakdown Voltage -45 V (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I V =-30V, I =0 Collector-Base Cutoff Current -15 nA CBO CB E (Note2) h 125 630 V =-5V, I =-2mA FE CE C DC Current Gain -0.3 V I =-10mA, I =-0.5mA C B Collector-Emitter Saturation Voltage V CE(sat) I =-100mA, I =-5mA -0.65 V C B V =-5V, I =-2mA -0.6 -0.75 V CE C V Base-Emitter Voltage BE -0.82 V V =-5V, I =-10mA CE C Transition Frequency f 200 MHz V =-5V, I =-10mA, f=100MHz T CE C C V =-10V, I =0, f=1MHz Collector Output Capacitance 3.5 pF ob CB E V =-5V, I =-0.2mA, f=1KHz CE C Noise Figure NF 2.5 dB R =2K, BW=200Hz S Note: 2.Pluse Width 300s, Duty Cycle 2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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