BCX56/BCX56-10/BCX56- 16 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic Encapsulate Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 StorageTemperature Range: -55 to +150 (Note1) Thermal Resistance: 250/W Junction to Ambient SOT-89 A Parameter Symbol Rating Unit K B V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO Emitter-Base Voltage V 5 V EBO C E I Collector Current 1.0 A C I Base Current 0.1 A B D I Peak Base Current (t <1ms) 0.2 A BM G H p (Note2) J 0.50 F (Note3) P Collector Power Dissipation W C 0.95 (Note4) L L 1.35 1 2 3 Classification Of h FE ( 1 ) DIMENSIONS INCHES MM DIM NOTE Rank BCX56-10 BCX56 BCX56-16 MIN MAX MIN MAX Range of h 63-250 63-160 100-250 A 0.169 0.185 4.30 4.70 FE(1) B 0.061 1.55 TYP. Marking BH BK BL C 0.154 0.171 3.91 4.35 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, D 0.031 0.047 0.80 1.20 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. E 0.089 0.104 2.25 2.65 F TYP. 0.118 3.00 Note:2. Device mounted on an FR4 PCB, Single-sided copper, tin-plated and standard footprint. G 0.013 0.020 0.33 0.52 Note:3. Device mounted on an FR4 PCB, Single-sided copper, mounting pad H 0.015 0.021 0.38 0.53 2 for collector 1cm J 0.014 0.017 0.35 0.44 Note:4.Device mounted on an FR4 PCB, Single-sided copper, mounting pad K 0.055 0.063 1.40 1.60 2 for collector 6cm L 1.50 TYP. 0.059 Pin Configuration - Top View Internal Structure Suggested Solder Pad Layout 1.900 0.075 C mm C inches 0.800 0.032 2.600 3.200 0.102 0.126 0.900 0.035 1.400 B 0.055 1.500 0.059 4.400 0.173 1.400 E 0.055 B C E Rev.3-4-12012020 1/4 MCCSEMI.COMBCX56/BCX56-10/BCX56- 16 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V V I =100A, I =0 100 (BR)CBO C E Collector-Emitter Breakdown Voltage V 80 V I =10mA, I =0 (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 5 V (BR)EBO E C I V =30V, I =0 Collector-Base Cutoff Current 0.1 A CBO CB E I V =5.0V, I =0 Emitter-Base Cutoff Current 0.1 A EBO EB C h 63 250 V =2.0V, I =150mA FE(1) CE C h V =2.0V, I =5mA DC Current Gain 40 FE(2) CE C h V =2.0V, I =500mA 25 FE(3) CE C V I =500mA, I =50mA Collector-Emitter Saturation Voltage 0.5 V CE(sat) C B Base-Emitter Voltage V 1.0 V V =2.0V, I =500mA BE CE C Transition Frequency f 130 MHz V =5.0V, I =10mA, f=100MHz T CE C Rev.3-4-12012020 2/4 MCCSEMI.COM