DMMT3904 Features Epitaxial Planar Die Construction Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1) NPN Moisture Sensitivity Level 1 Small Signal Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified SOT-363 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 G Thermal Resistance: 625/W Junction to Ambient C Parameter Symbol Rating Unit B V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO A M V Emitter-Base Voltage 5 V EBO H Collector Current I 200 mA C K L (Note2) Collector Power Dissipation P 200 mW C J D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS 2.Valid provided that terminals are kept at ambient temperature. INCHES MM DIM NOTE MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 Internal Structure J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 C E E 2 2 1 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout Marking: K4A B B C 2 1 1 (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMDMMT3904 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =10A, I =0 (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 5 V (BR)EBO E C Base Cutoff Current I 50 nA V =30V, V =3V BL CE EB(OFF) Collector Cutoff Current I 50 nA V =30V, V =3V CEX CE EB(OFF) h V =1V, I =0.1mA 40 FE(1) CE C h V =1V, I =1mA 70 FE(2) CE C (Note3) DC Current Gain h 100 300 V =1V, I =10mA FE(3) CE C h 60 V =1V, I =50mA FE(4) CE C h V =1V, I =100mA 30 FE(5) CE C I =10mA, I =1mA 0.2 V C B Collector-Emitter Saturation Voltage V CE(sat) I =50mA, I =5mA 0.3 V C B 0.65 0.85 V I =10mA, I =1mA C B V Base-Emitter Saturation Voltage BE(sat) I =50mA, I =5mA 0.95 V C B f V =20V, I =10mA, f=100MHz Transition Frequency 300 MHz T CE C C V =5V, I =0, f=1MHz Output Capacitance 4.0 pF obo CB E Delay Time t 35 ns V =3V, I =10mA d CC C V =-0.5V, I =1mA Rise Time t 35 ns r BE(OFF) B1 t Storage Time 200 ns V =3V, I =10mA s CC C I =I =1mA t Fall Time 50 ns B1 B2 f Note: 3. Pluse Width 300s, Duty Cycle 2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM