X-On Electronics has gained recognition as a prominent supplier of MJD112-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD112-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD112-TP Micro Commercial Components (MCC)

MJD112-TP electronic component of Micro Commercial Components (MCC)
Images are for reference only
See Product Specifications
Part No.MJD112-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 2 A 25MHz 1 W Surface Mount D-Pak
Datasheet: MJD112-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.1389
25000 : USD 0.1326
250000 : USD 0.1299
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2267
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7434
10 : USD 0.6185
100 : USD 0.4616
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5543
10 : USD 0.4715
100 : USD 0.3565
500 : USD 0.2841
1000 : USD 0.2357
2500 : USD 0.2058
10000 : USD 0.192
25000 : USD 0.1886
50000 : USD 0.1852
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
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Hts Code
Mxhts
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We are delighted to provide the MJD112-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD112-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD112 Features High DC Current Gain Built-in a Damper Diode at E-C Silicon Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 NPN epitaxial planer Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 125 /W Junction to Ambient DPAK(TO-252) Parameter Symbol Rating Unit J H V Collector-Base Voltage 100 V CBO C 1 V Collector-Emitter Voltage 100 V CEO O 2 4 F E V Emitter-Base Voltage 5 V EBO I 3 I Continuous Collector Current 2 A C M K V P Q Power Dissipation 1 W D A G L D B 1.BASE 2,4.COLLECTOR 3.EMITTER DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 0.190 4.83 G TYP. H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 0.114 2.90 TYP. K L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Rev.3-1-0 1012019 1/4 MCCSEMI.COMMJD112 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =1mA, I =0 Collector-Base Breakdown Voltage 100 V (BR)CBO C E V I =30mA, I =0 Collector-Emitter Breakdown Voltage 100 V (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I =5mA, I =0 (BR)EBO E C Collector Cutoff Current I 20 A V =100V, I =0 CBO CB E Collector Cutoff Current I 20 A V =50V, I =0 CEO CE B Emitter Cutoff Current I 2 mA V =5V, I =0 EBO EB C h 500 V =3V, I =0.5A FE(1) CE C DC Current Gain h 1000 12000 V =3V, I =2A FE(2) CE C h 200 V =3V, I =4A FE(3) CE C 2.0 V I =2A, I =8mA C B Collector-Emitter Saturation Voltage V CE(sat) 3.0 V I =4A, I =40mA C B Base-Emitter Voltage V 2.8 V V =3V, I =2A BE CE C Transition Frequency f 25 MHz V =10V, I =0.75A, f=1MHz T CE C C V =10V, I =0, f=0.1MHz Output Capacitance 100 pF ob CB E Rev.3-1-01012019 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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