MJD122 Features High DC Current Gain Built-in a Damper Diode at E-C Silicon Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 NPN epitaxial planer Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 83 /W Junction to Ambient DPAK(TO-252) Parameter Symbol Rating Unit J H V Collector-Base Voltage 100 V CBO C 1 V Collector-Emitter Voltage 100 V CEO O 2 4 F E V Emitter-Base Voltage 5 V EBO I 3 I Continuous Collector Current 8 A C M K V P Q Power Dissipation 1.5 W D A G L D B Internal Schematic Diagram 1.BASE 2,4.COLLECTOR 3.EMITTER C DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX B A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 R 1 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 R 7K 1 R 2 F 0.201 0.215 5.10 5.46 0.190 4.83 G TYP. R 250 2 H 0.236 0.244 6.00 6.20 E I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 0.114 2.90 TYP. K L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Rev.3-3-12012020 1/4 MCCSEMI.COMMJD122 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =1mA, I =0 Collector-Base Breakdown Voltage 100 V (BR)CBO C E V I =30mA, I =0 Collector-Emitter Breakdown Voltage 100 V (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I =3mA, I =0 (BR)EBO E C Collector Cutoff Current I 10 A V =100V, I =0 CBO CB E Collector Cutoff Current I 10 A V =50V, I =0 CEO CE B Emitter Cutoff Current I 2 mA V =5V, I =0 EBO EB C h 1000 12000 V =4V, I =4A FE(1) CE C DC Current Gain h 100 V =4V, I =8A FE(2) CE C 2.0 V I =4A, I =16mA C B Collector-Emitter Saturation Voltage V CE(sat) 4.0 V I =8A, I =80mA C B Base-Emitter Saturation Voltage V 4.5 V I =8A, I =80mA BE(sat) C B Base-Emitter Voltage V 2.8 V V =4V, I =4A BE CE C Output Capacitance C 200 pF V =10V, I =0, f=0.1MHz ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM