X-On Electronics has gained recognition as a prominent supplier of MJD32C-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD32C-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD32C-TP Micro Commercial Components (MCC)

MJD32C-TP electronic component of Micro Commercial Components (MCC)
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Part No.MJD32C-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.25 W Surface Mount D-Pak
Datasheet: MJD32C-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9207 ea
Line Total: USD 0.92 
Availability - 96
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
96
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9207
10 : USD 0.6391
100 : USD 0.4411
500 : USD 0.3564
1000 : USD 0.3322
2500 : USD 0.2992
5000 : USD 0.286
10000 : USD 0.275
25000 : USD 0.2739

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJD32C-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD32C-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD32C Features Designed for General Purpose Amplifier and Low Speed Switching Applications Halogen Free Available Upon Request By Adding Suffix-H Silicon Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP epitaxial planer Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -65 to +150 Storage Temperature Range: -65 to +150 Thermal Resistance: 100 /W Junction to Ambient DPAK(TO-252) Parameter Symbol Rating Unit J H V Collector-Base Voltage -100 V CBO C 1 V Collector-Emitter Voltage -100 V CEO O 2 4 F E V Emitter-Base Voltage -5 V EBO I 3 I Continuous Collector Current -3 A C M K V P Q Power Dissipation 1.25 W D A G L D B 1.BASE 2,4.COLLECTOR 3.EMITTER DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 F 0.201 0.215 5.10 5.46 0.190 4.83 G TYP. H 0.236 0.244 6.00 6.20 I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 0.114 2.90 TYP. K L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. O 0.043 0.051 1.10 1.30 Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Rev.3-2-12012020 1/4 MCCSEMI.COMMJD32C Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-1mA, I =0 Collector-Base Breakdown Voltage -100 V (BR)CBO C E V I =-30mA, I =0 Collector-Emitter Breakdown Voltage -100 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-1mA, I =0 (BR)EBO E C Collector Cutoff Current I -50 A V =-60V, I =0 CEO CE B Collector Cutoff Current I -20 A V =-100V, V =0 CER CE EB Emitter Cutoff Current I -1 mA V =-5V, I =0 EBO EB C h 25 V =-4V, I =-1A FE(1) CE C DC Current Gain h 10 50 V =-4V, I =-3A FE(2) CE C Collector-Emitter Saturation Voltage V -1.2 V I =-3A, I =-0.375A CE(sat) C B Base-Emitter Voltage V -1.8 V V =-4V, I =-3A BE CE C Transition Frequency f 3 MHz V =-10V, I =-0.5A, f=1KHz T CE C Rev.3-2-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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