MMBT2222AT Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 SOT-523 Storage Temperature Range: -55 to +150 A Parameter Symbol Rating Unit D V Collector-Base Voltage 75 V CBO C B V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO E Collector Current I 600 mA C Collector Power Dissipation P 150 mW C G J H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.059 0.067 1.50 1.70 B 0.030 0.033 0.75 0.85 0.057 0.069 1.45 1.75 C D 0.020 0.50 TYP. Internal Structure E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 C H 0.024 0.031 0.60 0.80 J 0.004 0.008 0.10 0.20 K 0.006 0.014 0.15 0.35 Marking: 1P Suggested Solder Pad Layout B E 1.0 (mm) 0.4 0.6 1.24 0. 6 0.5 Rev.3-4-12012020 1/4 MCCSEMI.COMMMBT2222AT Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 75 V I =10A, I =0 (BR)CBO C E V I =10mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I 100 nA V =70V, I =0 Collector-Base Cutoff Current CBO CB E I 10 nA Collector Cutoff Current V =V, 9 = CE X CE B( I V =3V, I =0 Emitter-Base Cutoff Current 100 nA EBO EB C h V =10V, I =0.1mA 35 FE(1) CE C h V =10V, I =1mA 50 FE(2) CE C (Note2) DC Current Gain h 75 V =10V, I =10mA FE(3) CE C h V =10V, I =150mA 100 300 FE(4) CE C h V =10V, I =500mA 40 FE(5) CE C I =150mA, I =15mA 0.3 V C B V Collector-Emitter Saturation Voltage CE(sat) 1.0 V I =500mA, I =50mA C B I =150mA, I =15mA 1.2 V C B Base-Emitter Saturation Voltage V BE(sat) I =500mA, I =50mA 2.0 V C B f V =20V, I =20mA, f=100MHz Transition Frequency 300 MHz T CE C V =10V, I =0, f=100KHz Output Capacitance C 8 pF CB E ob Delay Time t 10 ns V =30V, V =0.5V d CC BE t I =150mA, I =15mA Rise Time 25 ns r C B1 t Storage Time 225 ns V =30V, I =150mA s CC C I =I =15mA Fall Time t 60 ns B1 B2 f Note: 2.Pulse Width 300s, Duty Cycle2.0% Rev.3-4-12012020 2/4 MCCSEMI.COM 9