MMBT3904 T Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-523 Parameter Symbol Rating Unit V Collector-Base Voltage 60 V CBO A V D Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO C B Collector Current I 200 mA C Collector Power Dissipation P 150 mW C E Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G J H K Internal Structure DIMENSIONS C INCHES MM DIM NOTE MIN MAX MIN MAX A 0.059 0.067 1.50 1.70 B 0.030 0.033 0.75 0.85 Marking: 1N B E 0.057 0.069 1.45 1.75 C D 0.020 0.50 TYP. E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 J 0.004 0.008 0.10 0.20 K 0.006 0.014 0.15 0.35 Suggested Solder Pad Layout 1.0 (mm) 0.4 0.6 1.24 0. 6 0.5 Rev.3-4-12012020 1/4 MCCSEMI.COMMMBT3904 T Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =10A, I =0 Collector-Base Breakdown Voltage 60 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =10A, I =0 (BR)EBO E C I 50 nA V =30V, I =0 Collector-Base Cutoff Current CBO CB E I V =5V, I =0 Emitter-Base Cutoff Current 50 nA EBO EB C h V =1V, I =0.1mA 40 FE(1) CE C h 70 V =1V, I =1mA FE(2) CE C (Note2) DC Current Gain h 100 300 V =1V, I =10mA FE(3) CE C h V =1V, I =50mA 60 FE(4) CE C h V =1V, I =100mA 30 FE(5) CE C I =10mA, I =1mA 0.2 V C B V Collector-Emitter Saturation Voltage CE(sat) 0.3 V I =50mA, I =5mA C B I =10mA, I =1mA 0.65 0.85 V C B Base-Emitter Saturation Voltage V BE(sat) I =50mA, I =5mA 0.95 V C B f V =20V, I =10mA, f=100MHz Transition Frequency 300 MHz T CE C Output Capacitance C 4 pF V =5V, I =0, f=1MHz, ob CB E V =5V, I =100A CE C Noise Figure NF 5 dB R =1K, f=1MHz S t Delay Time 35 ns V =3V, V =0.5V d CC BE I =10mA, I =1mA Rise Time t 35 ns C B1 r t Storage Time 200 ns V =3V, I =10mA s CC C t I =I =1mA Fall Time 50 ns f B1 B2 Note: 2.Pulse Width 300s, Duty Cycle 2.0% Rev.3-4-12012020 2/4 MCCSEMI.COM