MMBT3906T Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant Suffix Designates RoHS Amplifier Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-523 Typical Thermal Resistance: 833/W Junction to Ambient A Parameter Symbol Rating Unit D V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO C B V Emitter-Base Voltage -5 V EBO Collector Current I -200 mA C E Collector Power Dissipation P 150 mW C G J H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.059 0.067 1.50 1.70 B 0.030 0.033 0.75 0.85 0.057 0.069 1.45 1.75 C C D 0.020 0.50 TYP. E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 Marking: 3N H 0.024 0.031 0.60 0.80 B E J 0.004 0.008 0.10 0.20 K 0.006 0.014 0.15 0.35 Suggested Solder Pad Layout 1.0 (mm) 0.4 0.6 1.24 0. 6 0.5 Rev.3-3-12012020 1/4 MCCSEMI.COMMMBT3906T Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -40 V I =-10A, I =0 (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I -50 nA V =-30V, I =0 Collector-Base Cutoff Current CBO CB E I -50 nA V =-5V, I =0 Emitter-Base Cutoff Current EBO EB C h V =-1V, I =-0.1mA 60 FE(1) CE C h V =-1V, I =-1mA 80 FE(2) CE C DC Current Gain h 100 300 V =-1V, I =-10mA FE(3) CE C h 60 V =-1V, I =-50mA FE(4) CE C h V =-1V, I =-100mA 30 FE(5) CE C I =-10mA, I =-1mA -0.25 V C B Collector-Emitter Saturation Voltage V CE(sat) I =-50mA, I =-5mA -0.4 V C B -0.65 -0.85 V I =-10mA, I =-1mA C B V Base-Emitter Saturation Voltage BE(sat) I =-50mA, I =-5mA -0.95 V C B f V =-20V, I =-10mA, f=100MHz Transition Frequency 250 MHz T CE C C V =-5V, I =0, f=1MHz Output Capacitance 4.5 pF obo CB E Input Capacitance C 10 pF V =-0.5V, I =0, f=1KHz ibo BE C V =-5V, I =-100A CE C Noise Figure NF 4 dB RS=1K, f=1MHz t Delay Time 35 ns V =-3V, V =-0.5V d CC BE I =-10mA, I =-1mA Rise Time t 35 ns C B1 r t Storage Time 225 ns V =-3V, I =-10mA s CC C t I =I =-1mA Fall Time 75 ns f B1 B2 Rev.3-3-12012020 2/4 MCCSEMI.COM