MMBT4403 Features Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 (Note 2) Thermal Resistance: 357 /W Junction to Ambient Parameter Symbol Rating Unit SOT-23 Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO A Emitter-Base Voltage V -5 V EBO D Continuous Collector Current I -600 mA C 3 B Power Dissipation P 350 mW C D 1 2 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F E <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2.For the Device Mounted on 15mm x 15mm x 1.6mm FR4 PCB with High Coverage of Single Sided 1oz Copper, in Still Air Conditions. G H J L K Marking: 2T DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 3 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 1 1.BASE G 0.01 0.15 0.0004 0.006 2.EMITTER H 0.035 0.043 0.90 1.10 2 3.COLLECTOR J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-12012020 1/4 MCCSEMI.COMMMBT4403 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -40 V (BR)CBO C E (3) V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Base Cutoff Current I -0.1 A V =-30V, V =-3V BL CE BE Collector Cutoff Current I -0.1 A V =-30V, V =-3V CEX CE BE h 30 V =-1V, I =-0.1mA FE(1) CE C h 60 V =-1V, I =-1mA FE(2) CE C (3) DC Current Gain h 100 V =-1V, I =-10mA FE(3) CE C h 100 300 V =-2V, I =-150mA FE(4) CE C h 20 V =-2V, I =-500mA FE(5) CE C -0.4 V I =-150mA, I =-15mA C B Collector-Emitter Saturation Voltage V CE(sat) -0.75 V I =-500mA, I =-50mA C B -0.75 -0.95 V I =-150mA, I =-15mA C B V Base-Emitter Saturation Voltage BE(sat) I =-500mA, I =-50mA -1.3 V C B f V =-10V, I =-20mA, f=100MHz Transition Frequency 200 MHz T CE C t Delay Time 15 ns d V =-30V, V =-0.5V, I =-150mA, CC BE C I =-15mA t Rise Time 20 ns B1 r t Storage Time 225 ns s V =-30V, I =-150mA, I =I =-15mA CC C B1 B2 t Fall Time 30 ns f C V =-10V, I =0,f=1MHz Collector-Base Capacitance 8.5 pF cb CB E C V =-0.5V, I =0, f=1MHz Emitter-Base Capacitance 30 pF eb EB C Note :3. Pulse test: Pulse Width300s,Duty Cycle 2.0%. Rev.3-4-12012020 2/4 MCCSEMI.COM