X-On Electronics has gained recognition as a prominent supplier of MMBT5551-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551-TP Micro Commercial Components (MCC)

MMBT5551-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.MMBT5551-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 300 mW Surface Mount SOT-23
Datasheet: MMBT5551-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0284 ea
Line Total: USD 85.2 
Availability - 23280
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
23280
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0284
6000 : USD 0.0171
9000 : USD 0.0134

797340
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0173
9000 : USD 0.0169
30000 : USD 0.0164
60000 : USD 0.0161
120000 : USD 0.0157

33617
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1075
10 : USD 0.0756
100 : USD 0.0394
1000 : USD 0.0362
3000 : USD 0.0234

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5551-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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600 300 MMBT5551 Features Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic Encapsulate Compliant. See Ordering Information) Transistor Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A Thermal Resistance: 417/W Junction to Ambient D B C Parameter Symbol Rating Unit V Collector-Base Voltage 180 V CBO F E V Collector-Emitter Voltage 160 V CEO Emitter-Base Voltage V 6 V EBO G H J Collector Current I mA C L P Collector Power Dissipation mW C K Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, DIMENSIONS <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 Internal Structure F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 C H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 L 0.007 0.020 0.20 0.50 Marking: G1 B E Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 1/4 MCCSEMI.COM Rev.3-4-12012020MMBT5551 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 180 V (BR)CBO C E Collector-Emitter Breakdown Voltage V 160 V I =1mA, I =0 (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I V =120V, I =0 Collector Cutoff Current 50 nA CBO CB E Emitter-Base Cutoff Current I 50 nA V =4V, I =0 EBO EB C 80 h V =5V, I =1.0mA FE1 CE C V =5V, I =10mA DC Current Gain h 100 300 CE C FE2 50 h V =5V, I =50mA FE3 CE C V 0.2 V Collector-Emitter Saturation Voltage I =50mA, I =5mA CE(sat) C B I =50mA, I =5mA Base-Emitter Saturation Voltage V V 1.0 C B BE(sat) f Transition Frequency 100 300 V =5V, I =10mA, f=30MHz T MHz CE C 2/4 MCCSEMI.COM Rev.3-4-12012020

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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