MMDT2222A Features Epitaxial Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 833/W Junction to Ambient SOT-363 Parameter Symbol Rating Unit G Collector-Base Voltage V 75 V CBO V Collector-Emitter Voltage 40 V CEO C B V Emitter-Base Voltage 6 V EBO Collector Current 0.6 A I C A Collector Power Dissipation P 150 mW C M H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L J D Internal Structure DIMENSIONS INCHES MM DIM NOTE C B E MIN MAX MIN MAX 2 1 1 A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. E B C Marking: K1P 2 2 1 G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMMMDT2222A Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 75 V I =10A, I =0 (BR)CBO C E V I =10mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I V =60V,I =0 Collector Cutoff Current 10 nA CBO CB E I 10 nA V =60V,V =3V Collector Cutoff Current CEX CE EB(OFF) I 10 nA V =3V,I =0 Emiiter Cutoff Current EBO EB C I V =60V,V =3V Base Cutoff Current 20 nA BL CE EB(OFF) h V =10V, I =0.1mA 35 FE1 CE C h 50 V =10V, I =1mA FE2 CE C h 75 V =10V, I =10mA FE3 CE C DC Current Gain h V =10V, I =150mA 100 FE4 300 CE C h V =1V, I =150mA 35 FE5 CE C h 40 V =10V, I =500mA FE6 CE C 0.3 V I =150mA, I =15mA C B V Collector-Emitter Saturation Voltage CE(sat) I =500mA, I =50mA 1.0 V C B I =150mA, I =15mA 0.6 1.2 V C B V Base-Emitter Saturation Voltage BE(sat) I =500mA, I =50mA 2.0 V C B Transition Frequency f 300 MHz V =20V, I =20mA, f=100MHz T CE C C V =10V, I =0, f=1MHz Output Capacitance 8 pF ob CB E V =10V, I =100uA, f=1kHz CE C Noise Figure NF 4 dB R =1k, BW=200Hz S Delay Time t 10 ns V =30V, V =-0.5V d CC BE(OFF) t I =150mA, I =15mA Rise Time 25 ns r C B1 t Storage Time 225 ns V =30V, I =150mA s CC C I =I =15mA Fall Time t 60 ns B1 B2 f Rev.3-3-12012020 2/4 MCCSEMI.COM