MMDT3904 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Halogen Free. Green Device (Note 1) NPN Moisture Sensitivity Level 1 Plastic Encapsulate Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 SOT-363 Storage Temperature Range: -55 to +150 Thermal Resistance: 625/W Junction to Ambient G Parameter Symbol Rating Unit C B V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO A M Collector Current I 200 mA H C (Note2) Collector Power Dissipation P 200 mW C K L Note: J 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, D <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Valid provided that terminals are kept at ambient temperature. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 Internal Structure B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 Marking: K6N M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-4-12012020 1/4 MCCSEMI.COMMMDT3904 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =10A, I =0 (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C Collector-Base Cutoff Current I 50 nA V =30V, I =0 CBO CB E Collector-Emitter Cutoff Current I 50 nA V =30V, I =0 CEO CE B I V =5V, I =0 Emitter-Base Cutoff Current 50 nA EBO EB C h V =1V, I =10mA 100 300 FE(1) CE C (Note3) DC Current Gain h 60 V =1V, I =50mA FE(2) CE C Collector-Emitter Saturation Voltage V 0.3 V I =50mA, I =5mA CE(sat) C B I =10mA, I =1mA 0.85 V C B 0.65 V Base-Emitter Saturation Voltage BE(sat) I =50mA, I =5mA 0.95 V C B f V =20V, I =10mA, f=100MHz Transition Frequency 300 MHz T CE C C V =5V, I =0, f=1MHz Output Capacitance 4.0 pF obo CB E Delay Time t 35 ns V =3V, I =10mA d CC C t V =0.5V, I =1mA Rise Time 35 ns r BE(OFF) B1 t Storage Time 200 ns V =3V, I =10mA s CC C I =I =1mA t Fall Time 50 ns B1 B2 f Note: 3.Pluse Width 300s, Duty Cycle 2.0% Rev.3-4-12012020 2/4 MCCSEMI.COM