MMDT3904V Features Epitaxial Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package NPN Halogen Free. Green Device (Note 1) Plastic Encapsulate Moisture Sensitivity Level 1 Amplifier Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 SOT-563 Storage Temperature Range: -55 to +150 Thermal Resistance: 625/W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage 60 V A CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V B EBO C Collector Current I 200 mA C Collector Power Dissipation P 200 mW C D G Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, M <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K H L Internal Structure DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Marking: KAP A 0.006 0.011 0.15 0.30 B 0.043 0.051 1.10 1.30 C 0.059 0.067 1.50 1.70 0.020 0.50 TYP. D G 0.035 0.043 0.90 1.10 H 0.059 0.067 1.50 1.70 K 0.022 0.026 0.55 0.65 L 0.004 0.011 0.10 0.30 M 0.004 0.007 0.10 0.18 Rev.3-4-07122021 1/4 MCCSEMI.COMMMDT3904V Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =10A, I =0 (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C Base Cutoff Current I 50 nA V =30V, V =3V BL CE EB(OFF) Collector Cutoff Current I 50 nA V =30V, V =3V CEX CE EB(OFF) h V =1V, I =0.1mA 40 FE(1) CE C h V =1V, I =1mA 70 FE(2) CE C (Note2) DC Current Gain h 100 300 V =1V, I =-10mA FE(3) CE C h 60 V =1V, I =50mA FE(4) CE C h V =1V, I =100mA 30 FE(5) CE C I =10mA, I =1mA 0.2 V C B Collector-Emitter Saturation Voltage V CE(sat) I =50mA, I =5mA 0.3 V C B 0.65 0.85 V I =10mA, I =1mA C B V Base-Emitter Saturation Voltage BE(sat) I =50mA, I =5mA 0.95 V C B f V =20V, I =10mA, f=100MHz Transition Frequency 300 MHz T CE C C V =5V, I =0, f=1MHz, Output Capacitance 4.0 pF ob CB E V =5V, I =0.1mA CE C Noise Figure NF 5 dB R =1K, f=1KHz S t Delay Time 35 ns V =3V, I =10mA d CC C V =-0.5V, I =-I =1mA t Rise Time 35 ns BE(OFF) B1 B2 r Storage Time t 200 ns V =3V, I =10mA s CC C I =I =1mA Fall Time t 50 ns f B1 B2 Note: 2.Pulse Width 300s, Duty Cycle 2.0% Rev.3-4-07122021 2/4 MCCSEMI.COM