MMDT3906 Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified SOT-363 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 G Parameter Symbol Rating Unit C B V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V A Emitter-Base Voltage -5 V EBO M H Collector Current I -200 mA C Collector Power Dissipation P 200 mW C K L J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, D <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 C B E 2 1 1 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 Marking: K3N E B C 2 2 1 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMMMDT3906 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -40 V I =-10A, I =0 (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C Collector-Base Cutoff Current I -50 nA V =-30V, I =0 CBO CB E Emitter-Base Cutoff Current I -50 nA V =-5V, I =0 EBO EB C h V =-1V, I =-0.1mA 40 FE(1) CE C h V =-1V, I =-1mA 70 FE(2) CE C DC Current Gain h 100 300 V =-1V, I =-10mA FE(3) CE C h 60 V =-1V, I =-50mA FE(4) CE C h V =-1V, I =-100mA 30 FE(5) CE C I =-10mA, I =-1mA -0.25 V C B Collector-Emitter Saturation Voltage V CE(sat) I =-50mA, I =-5mA -0.4 V C B -0.65 -0.85 V I =-10mA, I =-1mA C B V Base-Emitter Saturation Voltage BE(sat) I =-50mA, I =-5mA -0.95 V C B f V =-20V, I =-10mA, f=100MHz Transition Frequency 250 MHz T CE C C V =-5V, I =0, f=1MHz Output Capacitance 4.5 pF cbo CB E V =-5V, I =-0.1mA CE C Noise Figure NF 4 dB R =1K, f=1KHz S t V =-3V, I =-10mA Delay Time 35 ns d CC C V =-0.5V, I =-I =-1mA t Rise Time 35 ns CE B1 B2 r Storage Time t 225 ns V =-3V, I =-10mA s CC C I =I =-1mA Fall Time t 75 ns f B1 B2 Rev.3-3-12012020 2/4 MCCSEMI.COM