X-On Electronics has gained recognition as a prominent supplier of MMDT4403-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT4403-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMDT4403-TP Micro Commercial Components (MCC)

MMDT4403-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.MMDT4403-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT -600mA -40V
Datasheet: MMDT4403-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4814 ea
Line Total: USD 0.48 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1235
6000 : USD 0.1232
9000 : USD 0.1229
12000 : USD 0.1225
15000 : USD 0.1221
21000 : USD 0.1218
24000 : USD 0.1215
30000 : USD 0.1211
75000 : USD 0.1207

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4814
10 : USD 0.3623
100 : USD 0.19
500 : USD 0.1267
1000 : USD 0.0997
3000 : USD 0.0798
9000 : USD 0.0687
24000 : USD 0.0653
45000 : USD 0.0631

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT4403-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT4403-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMDT4403 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Dual PNP Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Plastic-Encapsulate Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient SOT-363 Parameter Symbol Rating Unit V Collector-Base Voltage -40 V CBO G 6 5 4 V Collector-Emitter Voltage -40 V CEO C V B Emitter-Base Voltage -5 V EBO 1 2 3 I Continuous Collector Current -600 mA C P Power Dissipation 200 mW D A M H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K L J D DIMENSIONS INCHES MM Marking: K2T DIM NOTE MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 Internal Structure C 0.079 0.096 2.00 2.45 0.026 0.65 D TYP. G 0.047 0.055 1.20 1.40 6 5 4 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout 1 2 3 (mm) 0.65 1.94 0.80 0.40 Rev.3-4-12012020 1/4 MCCSEMI.COMMMDT4403 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -40 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cutoff Current I -0.1 A V =-50V, I =0 CBO CB E Emitter Cutoff Current I -0.1 A V =-5V, I =0 EBO EB C h 30 V =-1V, I =-0.1mA FE(1) CE C h 60 V =-1V, I =-1mA FE(2) CE C DC Current Gain h 100 V =-1V, I =-10mA FE(3) CE C h 100 300 V =-2V, I =-150mA FE(4) CE C h 20 V =-2V, I =-500mA FE(5) CE C -0.4 V I =-150mA, I =-15mA C B Collector-Emitter Saturation Voltage V CE(sat) -0.75 V I =-500mA, I =-50mA C B -0.75 -0.95 V I =-150mA, I =-15mA C B V Base-Emitter Saturation Voltage BE(sat) I =-500mA, I =-50mA -1.3 V C B f V =-10V, I =-20mA, f=100MHz Transition Frequency 200 MHz T CE C t Delay Time 15 ns d V =-30V, V =-2V, I =-150mA, CC BE C I =-15mA t Rise Time 20 ns B1 r t Storage Time 225 ns s V =-30V, I =-150mA, I =-I =-15mA CC C B1 B2 t Fall Time 30 ns f C V =-10V, I =0, f=1MHz Output Capacitance 8.5 pF ob CB E Rev.3-4-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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