-200 200 MMDT5401 Features Ideal for Low Power Amplification and Switching Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Dual PNP Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings SOT-363 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625/W Junction to Ambient G C B Parameter Symbol Rating Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO A M Emitter-Base Voltage V -5 V H EBO Collector Current I mA C K L P Collector Power Dissipation mW C J D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 Internal Structure C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. C2 B1 E1 G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 1 2 3 Marking: K4M E2 B2 C1 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMMMDT5401 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -160 V (BR)CBO C E Collector-Emitter Breakdown Voltage V -150 V I =-1mA, I =0 (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I V =-120V, I =0 Collector Cutoff Current A CBO CB E -0.05 Emitter-Base Cutoff Current I -0.05 A V =-3V, I =0 EBO EB C 50 h V =-5V, I =-1mA FE1 CE C V =-5V, I =-10mA DC Current Gain h 100 300 CE C FE2 V =-5V, I =-50mA 50 CE C h FE3 -0.2 V I =-10mA, I =-1mA C B V Collector-Emitter Saturation Voltage CE(sat) -0.5 V I =-50mA, I =-5mA C B -1.0 V I =-10mA, I =-1mA C B V Base-Emitter Saturation Voltage BE(sat) -1.0 V I =-50mA, I =-5mA C B Output Capacitance C 4.5 pF V =-5V, I =0, f=1.0MHz ob CB E Transition Frequency f 100 300 MHz V =-10V, I =-10mA, f=100MHz T CE C V =-10V, I =-0.1mA, f=1kHz, R =1k Noise Figure NF 6 dB CE C S t V =-3.0V, V =-0.5V Delay Time 35 ns d CC BE I =-10mA, I =-I =-1mA Rise Time t 35 ns B2 C B1 r t V =-3V, I =-10mA Storage Time 225 ns s CC C I =-I =-1mA t Fall Time 75 ns B1 B2 f Rev.3-3-12012020 2/4 MCCSEMI.COM