X-On Electronics has gained recognition as a prominent supplier of MMDT5551-TP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT5551-TP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMDT5551-TP Micro Commercial Components (MCC)

MMDT5551-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.MMDT5551-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 200mA 160V
Datasheet: MMDT5551-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 8526
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8526
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.1991
100 : USD 0.1045
1000 : USD 0.0913
3000 : USD 0.077
9000 : USD 0.0572
24000 : USD 0.0572
45000 : USD 0.055

1891
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 10
Multiples : 10
10 : USD 0.1428
50 : USD 0.1274
180 : USD 0.098
480 : USD 0.0938

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT5551-TP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT5551-TP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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200 200 MMDT5551 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic Encapsulate Compliant. See Ordering Information) Transistors Maximum Ratings SOT-363 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 G Thermal Resistance: 625/W Junction to Ambient C B Parameter Symbol Rating Unit V Collector-Base Voltage 180 V CBO V A Collector-Emitter Voltage 160 V CEO M H Emitter-Base Voltage V 6 V EBO Collector Current I mA C K L J P Collector Power Dissipation mW C D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 C1 B2 E2 C 0.079 0.096 2.00 2.45 6 5 4 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 1 2 3 Marking: K4N E1 B1 C2 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMMMDT5551 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 180 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 160 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I V =120V, I =0 Collector-Base Cutoff Current 50 nA CBO CB E I V =4V, I =0 Emitter-Base Cutoff Current 50 nA EBO EB C h V =5V, I =1mA 80 FE(1) CE C DC Current Gain h V =5V, I =10mA 100 300 FE(2) CE C V I =10mA, I =1mA Collector-Emitter Saturation Voltage 0.15 V CE(sat) C B V I =10mA, I =1mA Base-Emitter Saturation Voltage 1 V BE(sat) C B f V =20V, I =10mA, f=100MHz Transition Frequency 100 300 MHz T CE C C V =5V, I =0, f=1MHz Output Capacitance 6 pF obo CB E V =5V, I =200A, f=1KHz, R =1K Noise Figure NF 8 dB CE C S Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components
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