MMSS8550-L,MMSS8550-H Features For Switching and AF Amplifier Applications Halogen Free. Green Device (Note 1) PNP Silicon Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings SOT-23 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 A D Thermal Resistance: 417/W Junction to Ambient Parameter Symbol Rating Unit B C V Collector-Base Voltage -40 V CBO F E V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO Collector Current I -1.5 A C G H J L Power Dissipation P 300 mW D K DIMENSIONS Classification of h FE(1) INCHES MM DIM NOTE MIN MAX MIN MAX Part Number MMSS8550-L MMSS8550-H A 0.110 0.120 2.80 3.04 Range 120-200 200-350 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 Internal Structure J 0.003 0.007 0.08 0.18 K 0.014 0.020 0.35 0.51 C L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout Marking: Y2 B E 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMMMSS8550-L,MMSS8550-H Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -40 V (BR)CBO C E V I =-100A, I =0 Collector-Emitter Breakdown Voltage -25 V (BR)CEO C B V I =-100A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C Collector-Base Cutoff Current I -100 nA V =-40V, I =0 CBO CB E I V =-20V, I =0 Collector-Emitter Cutoff Current -100 nA CEO CE B I V =-5V, I =0 Emitter-Base Cutoff Current -100 nA EBO EB C h V =-1V, I =-100mA 120 350 FE(1) CE C DC Current Gain h 40 V =-1V, I =-800mA FE(2) CE C Collector-Emitter Saturation Voltage V -0.5 V I =-800mA, I =-80mA CE(sat) C B V I =-800mA, I =-80mA Base-Emitter Saturation Voltage -1.2 V BE(sat) C B V V =-1V, I =-10mA Base-Emitter Voltage -1 V BE CE C Transition Frequency f 100 MHz V =-10V, I =-50mA, f=30MHz T CE C Rev.3-3-12012020 2/4 MCCSEMI.COM