MMST2222A Features Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Parameter Symbol Rating Unit SOT-323 Collector-Base Voltage V 75 V CBO V Collector-Emitter Voltage 40 V CEO A V Emitter-Base Voltage 6 V EBO D Maxmium Collector Current I 0.6 A CM Collector Power Dissipation P 200 mW C C B Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. E H J G K Marking: K3P L DIMENSIONS INCHES MM Internal Structure DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 B C C 0.083 0.096 2.10 2.45 0.026 0.65 TYP. D E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 B E G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-4-12012020 1/4 MCCSEMI.COMMMST2222A Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 75 V I =10A, I =0 (BR)CBO C E V I =10mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I 100 nA V =70V,I =0 Collector-Base Cutoff Current CBO CB E I 10 nA V =60V,V =3V Collector Cutoff Current CEX CE BE I V =3V,I =0 Emiiter Cutoff Current 100 nA EBO EB C h V =10V, I =1mA 50 FE1 CE C (Note2) DC Current Gain h 100 300 V =10V, I =150mA FE2 CE C Collector-Emitter Saturation Voltage V 0.6 V I =500mA, I =50mA CE(sat) C B V I =500mA, I =50mA Base-Emitter Saturation Voltage 0.6 1.2 V BE(sat) C B f V =20V, I =20mA, f=100MHz Transition Frequency 300 MHz T CE C C V =10V, I =0, f=1MHz, Output Capacitance 8 pF ob CB E Delay Time t 10 ns V =30V, V =0.5V d CC BE(off) t I =150mA, I =15mA Rise Time 25 ns r C B1 t Storage Time 225 ns V =30V, I =150mA s CC C I =I =15mA t Fall Time 60 ns B1 B2 f Note: 2.Pluse Width 300s, Duty Cycle 2.0% Rev.3-4-12012020 2/4 MCCSEMI.COM