MMST2907A Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant Suffix Designates RoHS Small Signal Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Parameter Symbol Rating Unit V Collector-Base Voltage -60 V CBO SOT-323 V Collector-Emitter Voltage -60 V CEO V A Emitter-Base Voltage -5 V EBO D Collector Current I -600 mA C Collector Power Dissipation P 200 mW C C B Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. F E H J G K Marking: K3F L DIMENSIONS INCHES MM Internal Structure DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 C B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. E 0.047 0.055 1.20 1.40 B E F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST2907A Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V -60 V I =-10A, I =0 (BR)CBO C E V I =-10mA, I =0 Collector-Emitter Breakdown Voltage -60 V (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C Collector-Base Cutoff Current I -10 nA V =-50V, I =0 CBO CB E Collector-Emitter Cutoff Current I -50 nA V =-35V, I =0 CEO CE B I V =-3V, I =0 Emitter-Base Cutoff Current -10 nA EBO EB C h V =-10V, I =-1mA 100 FE(1) CE C (Note2) DC Current Gain h 100 300 V =-10V, I =-150mA FE(2) CE C Collector-Emitter Saturation Voltage V -1.6 V I =-500mA, I =-50mA CE(sat) C B V I =-500mA, I =-50mA Base-Emitter Saturation Voltage -2.6 V BE(sat) C B f V =-20V, I =-50mA, f=100MHz Transition Frequency 200 MHz T CE C C V =-10V, I =0, f=1MHz, Output Capacitance 8 pF cbo CB E Delay Time t 10 ns V =-30V, I =-150mA d CC C t V =-0.5V, I =-15mA Rise Time 25 ns r BE(off) B1 t V =-30V, I =-150mA Storage Time 80 ns s CC C I =I =-15mA t Fall Time 30 ns B1 B2 f Note: 2.Pluse Width 300s, Duty Cycle 2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM