MMST3904 Features Epitaxial Planar Die Construction Complementary PNP Type Available MMST3906 NPN Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1) Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Transistors Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 SOT-323 Storage Temperature Range: -55 to +150 A Parameter Symbol Rating Unit D V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO C B V Emitter-Base Voltage 6 V EBO Collector Current I 200 mA C F E (2) Collector Power Dissipation P 200 mW C H J G Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K L 2. Valid provided that terminals are kept at ambient temperature. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 Marking: K2N B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. Internal Structure E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 C G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 B E L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST3904 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions (3) V 60 V I =10A, I =0 (BR)CBO C E Collector-Base Breakdown Voltage (3) V I =1mA, I =0 40 V (BR)CEO C B Collector-Emitter Breakdown Voltage (3) V I =10A, I =0 5 V Emitter-Base Breakdown Voltage (BR)EBO E C (3) I 50 nA V =30V, V =3V Base Cutoff Current BL CE EB(OFF) (3) I 50 nA V =30V, V =3V Collector Cutoff Current CEX CE EB(OFF) h V =1V, I =0.1mA 40 FE(1) CE C h V =1V, I =1mA 70 FE(2) CE C (3) h 100 300 V =1V, I =-10mA DC Current Gain FE(3) CE C h 60 V =1V, I =50mA FE(4) CE C h V =1V, I =500mA 30 FE(5) CE C I =10mA, I =1mA 0.25 V C B (3) V Collector-Emitter Saturation Voltage CE(sat) I =50mA, I =5mA 0.3 V C B 0.65 0.85 V I =10mA, I =1mA C B (3) V Base-Emitter Saturation Voltage BE(sat) I =50mA, I =5mA 0.95 V C B C V =5V, I =0, f=1MHz, Output Capacitance 4.0 pF cbo CB E C V =0.5V, I =0, f=1MHz, Input Capacitance 8.0 pF ibo BE C Input Impedance h 1 10 K ie 4 Voltage Feedback Ratio h 0.5 8 re x10 V =10V, I =1mA, f=1KHz CE C h Small Signal Current Gain 100 400 fe h Output Admittance 1 40 uS oe Transition Frequency f 300 MHz V =20V, I =10mA, f=100MHz T CE C V =5V, I =0.1mA CE C Noise Figure NF 5 dB R =1K, f=1KHz S t V =3V, I =0.1mA Delay Time 35 ns d CC C V =-0.5V, I =1mA Rise Time t 35 ns BE(OFF) B1 r Note: 3.Pulse Width 300s, Duty Cycle 2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM