MMST3906 Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST3904 PNP Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Small Signal Epoxy Meets UL 94 V-0 Flammability Rating Transistors Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-323 Parameter Symbol Rating Unit A V Collector-Base Voltage -0 V CBO D V Collector-Emitter Voltage - 0 V CEO V C Emitter-Base Voltage -5 V B EBO (2) Collector Current I - 00 mA C (2) Collector Power Dissipation P 200 mW C F E H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, G <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K 2. Valid provided that terminals are kept at ambient temperature. L DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Marking: K5N A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 Internal Structure D 0.026 0.65 TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 C G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 E B L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST3906 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions (3) V -40 V I =-10A, I =0 (BR)CBO C E Collector-Base Breakdown Voltage (3) V I =-1mA, I =0 -40 V (BR)CEO C B Collector-Emitter Breakdown Voltage (3) V I =-10A, I =0 -5 V Emitter-Base Breakdown Voltage (BR)EBO E C (3) I -50 nA V =-30V, V =-3V Collector Cutoff Current CEX CE EB(OFF) (3) I -50 nA V =-30V, V =-3V Base Cutoff Current BL CE EB(OFF) h V =-1V, I =-0.1mA 60 FE(1) CE C h V =-1V, I =-1mA 80 FE(2) CE C (3) h 100 300 V =-1V, I =-10mA DC Current Gain FE(3) CE C h 60 V =-1V, I =-50mA FE(4) CE C h V =-1V, I =-500mA 30 FE(5) CE C I =-10mA, I =-1mA -0.2 V C B (3) V Collector-Emitter Saturation Voltage CE(sat) I =-50mA, I =-5mA -0.3 V C B -0.65 -0.85 V I =-10mA, I =-1mA C B (3) V Base-Emitter Saturation Voltage BE(sat) I =-50mA, I =-5mA -0.95 V C B C V =-5V, I =0, f=1MHz Output Capacitance 4.5 pF cbo CB E C V =-0.5V, I =0, f=1MHz Input Capacitance 10 pF ibo EB C Input Impedance h 2 12 K ie 4 Voltage Feedback Ratio h 0.1 10 re x10 V =-10V, I =-1mA, f=1KHz CE C h Small Signal Current Gain 100 400 fe h Output Admittance 3 60 uS oe Transition Frequency f 300 MHz V =-20V, I =-10mA, f=100MHz T CE C V =-5V, I =-0.1mA CE C Noise Figure NF 4 dB R =1K, f=1KHz S t Delay Time 35 ns V =-3V, I =-10mA d CC C V =-0.5V, I =-1mA Rise Time t 35 ns BE(OFF) B1 r Storage Time t 225 ns V =-3V, I =-10mA s CC C t I =I =-1mA Fall Time 75 ns f B1 B2 Note: 3.Pulse Width 300s, Duty Cycle2.0% Rev.3-3-12012020 2/4 MCCSEMI.COM