MMST4401 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Small Signal Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO SOT-323 V Emitter-Base Voltage 6 V EBO A I Continuous Collector Current 600 mA C D P Power Dissipation 200 mW D 3 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, C B <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 1 2 F E Marking: K3X H J G K Internal Structure L DIMENSIONS INCHES MM 3 DIM NOTE MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 1 1.BASE C 0.083 0.096 2.10 2.45 2.EMITTER D 0.026 0.65 TYP. 3.COLLECTOR E 0.047 0.055 1.20 1.40 2 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST4401 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 60 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Collector Cutoff Current I 0.1 A V =35V, I =0 CBO CB E Collector Cutoff Current I 0.1 A V =35V, I =0 CEO CE B Emitter Cutoff Current I 0.1 A V =5V, I =0 EBO EB C h 100 300 V =1V, I =150mA FE(1) CE C DC Current Gain h 40 V =2V, I =500mA FE(2) CE C Collector-Emitter Saturation Voltage V 0.4 V I =150mA, I =15mA CE(sat) C B Base-Emitter Saturation Voltage V 0.95 V I =150mA, I =15mA BE(sat) C B Transition Frequency f 250 MHz V =10V, I =20mA, f=100MHz T CE C Delay Time t 15 ns d V =30V,I =150A, CC C V =2V,I =15mA Rise Time t 20 ns BE(off) B1 r t Storage Time 225 ns s V =30V, I =150mA, CC C I =I =15mA t Fall Time 30 ns B1 B2 f C V =10V, I =0, f=1MHz Output Capacitance 6.5 pF ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM