MMST4403 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Small Signal Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage -40 V CBO SOT-323 V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO A D I Continuous Collector Current -600 mA C 3 P Power Dissipation 200 mW D C B Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, 1 2 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. F E H J G K Marking: K3T L DIMENSIONS INCHES MM DIM NOTE Internal Structure MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 3 C 0.083 0.096 2.10 2.45 0.026 0.65 D TYP. E 0.047 0.055 1.20 1.40 1 F 0.012 0.016 0.30 0.40 1.BASE G 0.000 0.004 0.00 0.10 2.EMITTER H 0.035 0.044 0.90 1.10 3.COLLECTOR 2 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST4403 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -40 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cutoff Current I -0.1 A V =-35V, I =0 CBO CB E Collector Cutoff Current I -0.1 A V =-35V, I =0 CEO CE B Emitter Cutoff Current I -0.1 A V =-4V, I =0 EBO EB C DC Current Gain h 100 300 V =-2V, I =-150mA FE CE C Collector-Emitter Saturation Voltage V -0.4 V I =-150mA, I =-15mA CE(sat) C B Base-Emitter Saturation Voltage V -0.95 V I =-150mA, I =-15mA BE(sat) C B Transition Frequency f 200 MHz V =-10V, I =-20mA, f=100MHz T CE C Delay Time t 15 ns V =-30V,I =-150A, d CC C V =-2V,I =-15mA Rise Time t 20 ns BE(off) B1 r Storage Time t 225 ns s V =-30V, I =-150mA, CC C I =I =-15mA t Fall Time 30 ns B1 B2 f C V =-10V, I =0, f=1MHz Output Capacitance 8.5 pF ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM