-200 200 MMST5401 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant Suffix Designates RoHS Plastic Encapsulate Compliant. See Ordering Information) Transistor Maximum Ratings Operating Junction Temperature Range: -55 to +150 SOT-323 Storage Temperature Range: -55 to +150 Thermal Resistance: 625/W Junction to Ambient A D Parameter Symbol Rating Unit V Collector-Base Voltage -160 V CBO C B V Collector-Emitter Voltage -150 V CEO Emitter-Base Voltage V -5 V EBO F E Collector Current I mA C H J P Collector Power Dissipation mW C G K Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, L <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. D IME N S ION S IN C H E S MM D IM N OTE MIN MA X MIN MA X A 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 B Internal Structure C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. C E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 Marking: K4M B E J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST5401 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -160 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -150 V (BR)CEO C B V I =-10A, I =0 Emitter-Base Breakdown Voltage -5 V (BR)EBO E C I V =-120V, I =0 Collector-Base Cutoff Current -50 nA CBO CB E I V =-3V, I =0 Emitter-Base Cutoff Current -50 nA EBO EB C h V =-5V, I =-1mA 50 FE(1) CE C h V =-5V, I =-10mA DC Current Gain 60 300 FE(2) CE C h V =-5V, I =-50mA 50 FE(3) CE C I =-10mA, I =-1mA -0.2 V C B Collector-Emitter Saturation Voltage V CE(sat) I =-50mA, I =-5mA -0.5 V C B I =-10mA, I =-1mA -1 V C B Base-Emitter Saturation Voltage V BE(sat) I =-50mA, I =-5mA -1 V C B f V =-10V, I =-10mA, f=100MHz Transition Frequency 100 300 MHz T CE C C V =-10V, I =0, f=1MHz Output Capacitance 6 pF ob CB E V =-5V, I =-200A, R =10 CE C g Noise Figure NF 8 dB f=1KHz Rev.3-3-12012020 2/4 MCCSEMI.COM