200 200 MMST5551 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant Suffix Designates RoHS Small Signal Compliant. See Ordering Information) Transistor Maximum Ratings SOT-323 Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625/W Junction to Ambient A D Parameter Symbol Rating Unit C B V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO F E Emitter-Base Voltage V 6 V EBO Collector Current I mA C H J G P Collector Power Dissipation mW C K L Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, D IME N S ION S <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. IN C H E S MM D IM N OTE MIN MA X MIN MA X A 0.071 0.087 1.80 2.20 Internal Structure B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 C 0.026 0.65 D TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 Marking: K4N B E H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMST5551 Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 180 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 160 V (BR)CEO C B V I =10A, I =0 Emitter-Base Breakdown Voltage 6 V (BR)EBO E C I V =120V, I =0 Collector-Base Cutoff Current 50 nA CBO CB E I V =4V, I =0 Emitter-Base Cutoff Current 50 nA EBO EB C h V =5V, I =1mA 80 FE(1) CE C h V =5V, I =10mA DC Current Gain 100 300 FE(2) CE C h V =5V, I =50mA 30 FE(3) CE C I =10mA, I =1mA 0.15 V C B Collector-Emitter Saturation Voltage V CE(sat) I =50mA, I =5mA 0.2 V C B I =10mA, I =1mA 1 V C B Base-Emitter Saturation Voltage V BE(sat) I =50mA, I =5mA 1 V C B f V =10V, I =20mA, f=100MHz Transition Frequency 100 300 MHz T CE C C V =10V, I =0, f=1MHz Output Capacitance 6 pF ob CB E Noise Figure NF 8 dB V =5V, I =200A, f=1KHz, R =1K CE C S Rev.3-3-12012020 2/4 MCCSEMI.COM