MMSTA92 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Halogen Free. Green Device (Note 1) PNP Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Transistors Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient SOT-323 Parameter Symbol Rating Unit V Collector-Base Voltage -300 V CBO A V Collector-Emitter Voltage -300 V CEO D V Emitter-Base Voltage -5 V EBO 3 I Continuous Collector Current -100 mA C C B P Power Dissipation 200 mW D 1 2 F E Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. H J G K Marking: K3R L DIMENSIONS INCHES MM DIM NOTE Internal Structure MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 3 C 0.083 0.096 2.10 2.45 0.026 0.65 D TYP. E 0.047 0.055 1.20 1.40 1 F 0.012 0.016 0.30 0.40 1.BASE G 0.000 0.004 0.00 0.10 2.EMITTER H 0.035 0.044 0.90 1.10 2 3.COLLECTOR J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 QseecqrcbQmjbcpN bJ wmsr 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMMMSTA92 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -300 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage* -300 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cutoff Current I -0.25 A V =-200V, I =0 CBO CB E Emitter Cutoff Current I -0.1 A V =-3V, I =0 EBO EB C h 25 V =-10V, I =-1mA FE(1) CE C DC Current Gain* h 40 V =-10V, I =-10mA FE(2) CE C h 25 V =-10V, I =-30mA FE(3) CE C Collector-Emitter Saturation Voltage V -0.4 V I =-20mA, I =-2mA CE(sat) C B Base-Emitter Saturation Voltage V -0.9 V I =-20mA, I =-2mA BE(sat) C B Transition Frequency f 50 MHz V =-20V, I =-10mA, f=100MHz T CE C Collector-Base Capacitance C 6 pF V =-20V, I =0,f=1MHz cb CB E *.Pulse test: Pulse Width 300s,Duty Cycle 2.0%. Rev.3-3-12012020 2/4 MCCSEMI.COM