MPSA06 Features NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Halogen Free Available Upon Request By Adding Suffix-H NPN Small Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Signal Transistor Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) As Complementary Type The PNP Transistor is MPSA56 Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit TO-92 V Collector-Base Voltage 80 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 4 V EBO A E Continuous Collector Current I 0.5 A C o Power Dissipation T =25 C P 625 mW A D o Power Dissipation T =25 C P 1.5 W C D B 1 2 3 G Marking Code: MPSA06 C Internal Structure C D B 1.EMITTER 2.BASE 3.COLLECTOR E DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COMMPSA06 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 80 V I =100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 80 V I =1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 4 V I =100A, I =0 (BR)EBO E C Collector Cut-off Current I 0.1 A V =80V, I =0 CBO CB E Emitter Cut-off Current I 0.1 A V =3V, I =0 EBO EB C h V =1V, I =100mA 100 400 FE(1) CE C DC Current Gain h V =1V, I =10mA 100 FE(2) CE C V I =100mA, I =10mA Collector-Emitter Saturation Voltage 0.25 V CE(sat) C B V I =100mA, I =10mA Base-Emitter Saturation Voltage 1.2 V BE(sat) C B f V =2V, I =10mA, f=100MHz Transition Frequency 100 MHz T CE C Rev.3-2-12012020 2/4 MCCSEMI.COM