MPSA55/MPSA56 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Silicon Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Amplifier Transistor Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Thermal Resistance: 83.3/W Junction to Case Parameter Symbol Rating Unit V Collector-Base Voltage -80 V CBO Collector-Emitter Voltage V -80 V CEO TO-92 Emitter-Base Voltage V -4 V EBO Continuous Collector Current I -500 mA C 625 mW T =25,Derate A above 25 A E 5 mW/ P Power Dissipation D T =25,Derate 1.5 W C above 25 12 mW/ B 1 2 3 Marking Code: MPSA55,MPSA56 G Internal Structure C C B 1.EMITTER 2.BASE D 3.COLLECTOR E DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COMMPSA55/MPSA56 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions MPSA55 -60 Collector-Emitter V V I =-1mA, I =0 (BR)CEO C B Breakdown Voltage* MPSA56 -80 Emitter-Base Breakdown Voltage V -4 V I =-100A, I =0 (BR)EBO E C Collector Cutoff Current I -0.1 A V =-60V, I =0 CES CE B MPSA55 -0.1 A V =-60V, I =0 CB E Collector Cutoff Current I CBO V =-80V, I =0 MPSA56 -0.1 A CB E h V =-1V, I =-10mA 100 FE(1) CE C DC Current Gain* h V =-1V, I =-100mA 100 FE(2) CE C V I =-100mA, I =-10mA Collector-Emitter Saturation Voltage -0.25 V CE(sat) C B V V =-1V, I =-100mA Base-Emitter Saturation Voltage -1.2 V BE(on) CE C f V =-1V, I =-100mA, f=100MHz Transition Frequency 50 MHz T CE C *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM